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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
PHB45NQ10T,118 | NXP Semiconductors | MOSFET N-CH 100V 47A SOT404 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 61nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BUK7508-55A,127 | NXP Semiconductors | MOSFET N-CH 55V 75A SOT78 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 76nC @ 0V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 4352pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 254W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | от 0,00 | Доп. информация Искать в поставщиках | |
PHB101NQ04T,118 | NXP Semiconductors | MOSFET N-CH 40V 75A D2PAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 36.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 2020pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 157W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BUK964R4-40B,118 | NXP Semiconductors | MOSFET N-CH 40V 75A D2PAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 64nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 7124pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 254W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BSP100,135 | NXP Semiconductors | MOSFET N-CH 30V 3.2A SOT223 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 250pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 8.3W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 | Доп. информация Искать в поставщиках | |
BUK9628-55A,118 | NXP Semiconductors | MOSFET N-CH 55V 42A D2PAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 55V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1725pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 99W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BUK7E11-55B,127 | NXP Semiconductors | MOSFET N-CH 55V 75A I2PAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 2604pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 157W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-220AB (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BUK7510-100B,127 | NXP Semiconductors | MOSFET N-CH 100V 75A TO220AB Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 6773pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | от 0,00 | Доп. информация Искать в поставщиках | |
BUK9226-75A,118 | NXP Semiconductors | MOSFET N-CH 75V 45A DPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 24.6 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 3120pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 114W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
BUK7528-55,127 | NXP Semiconductors | MOSFET N-CH 55V 40A SOT 78 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 55V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 96W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | Доп. информация Искать в поставщиках | ||
BUK7219-55A,118 | NXP Semiconductors | MOSFET N-CH 55V 55A DPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 19 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 2108pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 114W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
BUK7616-55A,118 | NXP Semiconductors | MOSFET N-CH 55V 65.7A SOT404 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Current - Continuous Drain (Id) @ 25° C: 65.7A · Input Capacitance (Ciss) @ Vds: 2245pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 138W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
BUK9520-100A,127 | NXP Semiconductors | MOSFET N-CH 100V 63A SOT78 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 19 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 63A · Input Capacitance (Ciss) @ Vds: 6385pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | от 0,00 | Доп. информация Искать в поставщиках | |
BUK7575-55,127 | NXP Semiconductors | MOSFET N-CH 55V 19.7A SOT78 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Current - Continuous Drain (Id) @ 25° C: 19.7A · Input Capacitance (Ciss) @ Vds: 500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 61W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | Доп. информация Искать в поставщиках | ||
BUK7613-75B,118 | NXP Semiconductors | MOSFET N-CH 75V 75A D2PAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 2644pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 157W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BUK95150-55A,127 | NXP Semiconductors | MOSFET N-CH 55V 13A TO220AB Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 137 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 55V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 339pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 53W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | от 0,00 | Доп. информация Искать в поставщиках | |
SI4800,518 | NXP Semiconductors | MOSFET N-CH 30V 9A SOT96-1 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11.8nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
PHP129NQ04LT,127 | NXP Semiconductors | MOSFET N-CH 40V 75A SOT78 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 44.2nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3965pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | Доп. информация Искать в поставщиках | ||
PMF290XN,115 | NXP Semiconductors | MOSFET N-CH 20V 1A SOT-323 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.72nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 34pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 560mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | от 0,00 | Доп. информация Искать в поставщиках | |
BST82,235 | NXP Semiconductors | MOSFET N-CH 100V 190MA SOT-23 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 5V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 40pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 | Доп. информация Искать в поставщиках | |
PHD37N06LT,118 | NXP Semiconductors | MOSFET N-CH 55V 37A DPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 22.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 37A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
PHD110NQ03LT,118 | NXP Semiconductors | MOSFET N-CH 25V 75A SOT428 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 26.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 2200pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 115W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
PH20100S,115 | NXP Semiconductors | MOSFET N-CH 100V 34.3A LFPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34.3A · Input Capacitance (Ciss) @ Vds: 2264pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 62.5W · Mounting Type: Surface Mount · Package / Case: LFPak-4 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BUK9612-55B,118 | NXP Semiconductors | MOSFET N-CH 55V 75A D2PAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 31nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3693pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 157W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BUK9604-40A,118 | NXP Semiconductors | MOSFET N-CH 40V 75A SOT404 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 128nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 8260pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
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