 - Дополнительное фото |
BSS123-7 — MOSFET N-CH 100V 170MA SOT23-3
| ||||||||||||||||||||||||
| Войти Регистрация |
|
|||||||||||||||||||||||||||
| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | DMN2100UDM-7 | Diodes Inc | MOSFET N-CH 20V 3.3A SOT-26 Rds On (Max) @ Id, Vgs: 55 mOhm @ 6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 3.3A · Input Capacitance (Ciss) @ Vds: 555pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Surface Mount · Package / Case: SOT-26 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| DMG3414U-7 | Diodes Inc | MOSFET N-CH 20V 4.2A SOT23 Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 9.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.2A · Input Capacitance (Ciss) @ Vds: 829.9pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 780mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | DMN3115UDM-7 | Diodes Inc | MOSFET N-CH 30V 3.2A SOT-26 Rds On (Max) @ Id, Vgs: 60 mOhm @ 6A, 4.5V · Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 476pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Surface Mount · Package / Case: SOT-26 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| DMG2302U-7 | Diodes Inc | MOSFET N-CH 20V 4.2A SOT23 Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.2A · Input Capacitance (Ciss) @ Vds: 594.3pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 800mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| DMN3033LDM-7 | Diodes Inc | MOSFET N-CH 30V 6.9A SOT-26 Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.9A · Input Capacitance (Ciss) @ Vds: 755pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: SOT-26 | от 0,00 | Доп. информация Искать в поставщиках | |
| DMP3056LSS-13 | Diodes Inc | MOSFET P-CH 30V 7.1A 8-SOIC Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.1A · Input Capacitance (Ciss) @ Vds: 722pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSS84-7-F | Diodes Inc | MOSFET P-CH 50V 130MA SOT23-3 Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V · Drain to Source Voltage (Vdss): 50V · Current - Continuous Drain (Id) @ 25° C: 130mA · Input Capacitance (Ciss) @ Vds: 45pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | DMN3112SSS-13 | Diodes Inc | MOSFET N-CH 30V 6A 8SOP Rds On (Max) @ Id, Vgs: 57 mOhm @ 5.8A, 10V · Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 268pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | DMN2170U-7 | Diodes Inc | MOSFET N-CH 20V 2.3A SOT23-3 Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 217pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 600mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| DMN3050S-7 | Diodes Inc | MOSFET N-CH 30V 5.2A SOT-23 Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.2A, 10V · Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 5.2A · Input Capacitance (Ciss) @ Vds: 390pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.4W · Mounting Type: Surface Mount · Package / Case: SOT-23 | Доп. информация Искать в поставщиках | ||
| DMP2004WK-7 | Diodes Inc | MOSFET P-CH 20V 400MA SC70-3 Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 400mA · Input Capacitance (Ciss) @ Vds: 175pF @ 16V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 250mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | от 0,00 | Доп. информация Искать в поставщиках | |
 | DMP2004K-7 | Diodes Inc | MOSFET P-CH 20V 600MA SOT23-3 Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 600mA · Input Capacitance (Ciss) @ Vds: 175pF @ 16V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 550mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| DMG2301U-7 | Diodes Inc | MOSFET P-CH 20V 2.5A SOT23 Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.8A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 608pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 800mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | DMP22D6UT-7 | Diodes Inc | MOSFET P-CH 20V 430MA SOT-523 Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 430mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 430mA · Input Capacitance (Ciss) @ Vds: 175pF @ 16V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 150mW · Mounting Type: Surface Mount · Package / Case: SOT-523 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | DMP2123L-7 | Diodes Inc | MOSFET P-CH 20V 3A SOT23-3 Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.3nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 443pF @ 16V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.4W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| DMN2020LSN-7 | Diodes Inc | MOSFET N-CH 20V 6.9A SC59 Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.9A · Input Capacitance (Ciss) @ Vds: 1149pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 610mW · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | DMP2066LDM-7 | Diodes Inc | MOSFET P-CH 20V 4.6A SOT-26 Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10.1nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.6A · Input Capacitance (Ciss) @ Vds: 820pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: SOT-26 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| DMN2009LSS-13 | Diodes Inc | MOSFET N-CH 20V 12A 8-SOIC Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 58.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2555pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
| BS170 | Diodes Inc | MOSFET N-CH 60V 300MA TO92-3 Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 60pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Доп. информация Искать в поставщиках | ||
 | DMP3100L-7 | Diodes Inc | MOSFET P-CH 30V 2.7A SOT23-3 Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 227pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.08W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 | Доп. информация Искать в поставщиках |
 | DMP2104LP-7 | Diodes Inc | MOSFET P-CH 20V 1.5A 3-DFN Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 320pF @ 16V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: 3-DFN | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | DMN100-7-F | Diodes Inc | MOSFET N-CH 30V 1.1A SC59-3 Rds On (Max) @ Id, Vgs: 240 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.1A · Input Capacitance (Ciss) @ Vds: 150pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | DMP2066LSS-13 | Diodes Inc | MOSFET P-CH 20V 6.5A 8-SOIC Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.8A, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 820pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| DMP2012SN-7 | Diodes Inc | MOSFET P-CH 20V 700MA SC59-3 Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 700mA · Input Capacitance (Ciss) @ Vds: 180pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| DMG4468LK3-13 | Diodes Inc | MOSFET N-CH 30V 9.7A TO252 Rds On (Max) @ Id, Vgs: 16 mOhm @ 11.6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18.85nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 867pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.68W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| © 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |
