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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT30M19JVFR — MOSFET N-CH 300V 130A SOT-227

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
СерияPOWER MOS V®
Rds On (Max) @ Id, Vgs19 mOhm @ 500mA, 10V
Drain to Source Voltage (Vdss)300V
Gate Charge (Qg) @ Vgs975nC @ 10V
Current - Continuous Drain (Id) @ 25° C130A
Input Capacitance (Ciss) @ Vds21600pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max700W
Mounting TypeChassis Mount
Package / CaseSOT-227
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT30M70SVRGMicrosemi-PPGMOSFET N-CH 300V 48A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 48A  ·  Input Capacitance (Ciss) @ Vds: 5870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT20M18LVRGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 330nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9880pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10040LVFRGMicrosemi-PPGMOSFET N-CH 1000V 25A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 630nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT50M80LVRGMicrosemi-PPGMOSFET N-CH 500V 58A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 423nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 8797pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT8015JVRMicrosemi-PPGMOSFET N-CH 800V 44A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 285nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 17650pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M22LVFRGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT5020BVFRGMicrosemi-PPGMOSFET N-CH 500V 26A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M22LVRGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT20M18B2VFRGMicrosemi-PPGMOSFET N-CH 200V 100A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 330nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9880pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT30M85BVRGMicrosemi-PPGMOSFET N-CH 300V 40A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 4950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8065BVFRGMicrosemi-PPGMOSFET N-CH 800V 13A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 3700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT6011B2VFRGMicrosemi-PPGMOSFET N-CH 600V 49A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 24.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 450nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 8900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5015BVFRGMicrosemi-PPGMOSFET N-CH 500V 32A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 5280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT30M40LVRGMicrosemi-PPGMOSFET N-CH 300V 76A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 76A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT8024B2VFRGMicrosemi-PPGMOSFET N-CH 800V 33A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 7740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M22JVFRMicrosemi-PPGMOSFET N-CH 200V 97A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 97A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT50M85B2VFRGMicrosemi-PPGMOSFET N-CH 500V 56A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 28A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 420nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 56A  ·  Input Capacitance (Ciss) @ Vds: 10500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT30M40B2VFRGMicrosemi-PPGMOSFET N-CH 300V 76A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 76A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10086SVFRGMicrosemi-PPGMOSFET N-CH 1000V 13A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 860 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT50M80LVFRGMicrosemi-PPGMOSFET N-CH 500V 58A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 423nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 8797pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6040BVRGMicrosemi-PPGMOSFET N-CH 600V 16A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 3120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M38SVRGMicrosemi-PPGMOSFET N-CH 200V 67A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 6120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT10M07JVFRMicrosemi-PPGMOSFET N-CH 100V 225A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 1050nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 225A  ·  Input Capacitance (Ciss) @ Vds: 21600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6015JVFRMicrosemi-PPGMOSFET N-CH 600V 35A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6030SVRGMicrosemi-PPGMOSFET N-CH 600V 21A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 3750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 298W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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