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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 

2SK2967 — MOSFET N-CH 250V 30A 2-16C1B

ПроизводительToshiba
Rds On (Max) @ Id, Vgs68 mOhm @ 15A, 10V
Drain to Source Voltage (Vdss)250V
Gate Charge (Qg) @ Vgs132nC @ 10V
Current - Continuous Drain (Id) @ 25° C30A
Input Capacitance (Ciss) @ Vds5400pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max150W
Mounting TypeThrough Hole
Package / Case2-16C1B (TO-247 N)
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
TPC8113(TE12L,Q)ToshibaMOSFET P-CH 30V 11A SOP8 2-6J1B
Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 107nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-6J1B
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TPC6104(TE85L,F,M)ToshibaMOSFET P-CH 20V 4.5A VS6 2-3T1A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 1430pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3T1A
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2SK2884(TE24L,Q)ToshibaMOSFET N-CH 800V 5A TO-220
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 1080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-10S2B
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TPCF8A01(TE85L,F)TPCF8A01(TE85L,F)ToshibaMOSFET N-CH 20V 3A VS-8
Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 7.5nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 590pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 330mW  ·  Mounting Type: Surface Mount
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2SK3565(Q,M)2SK3565(Q,M)ToshibaMOSFET N-CH 900V 5A TO-220SIS
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 1150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK2233ToshibaMOSFET N-CH 60V 45A 2-16C1B
Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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TPCA8105(TE12L,Q,MToshibaMOSFET P-CH 12V 6A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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TPCA8010-H(TE12LQMToshibaMOSFET N-CH 200V 5.5A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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2SK2964(TE12L,F)ToshibaMOSFET N-CH 30V 2A PW-MINI
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 5.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: PW-MINI
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TPCF8B01(TE85L,F)TPCF8B01(TE85L,F)ToshibaMOSFET P-CH 20V 2.7A VS-8
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 1.35W  ·  Mounting Type: Surface Mount
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TPC8106-H(TE12L)TPC8106-H(TE12L)ToshibaMOSFET P-CH 30V 10A 8-SOP
Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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TPC6001(TE85L,F)ToshibaMOSFET N-CH 20V 6A VS-6
Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 755pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: VS-6 (SOT-23-6)
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2SK2398ToshibaMOSFET N-CH 60V 45A 2-16C1B
Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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TPCA8003-H(TE12L,QTPCA8003-H(TE12L,QToshibaMOSFET N-CH 30V 35A 8-SOPA
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 1465pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOPA
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2SK3761(M)2SK3761(M)ToshibaMOSFET N-CH 600V 6A TO-220AB
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1050pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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TPCA8009-H(TE12L,QTPCA8009-H(TE12L,QToshibaMOSFET N-CH 150V 7A 8-SOPA
Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOPA
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2SK2602ToshibaMOSFET N-CH 600V 6A 2-16C1B
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK2614(Q)2SK2614(Q)ToshibaMOSFET N-CH 50V 20A 2-7B1B
Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-7B1B
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2SK2953(F)2SK2953(F)ToshibaMOSFET N-CH 600V 15A 2-16F1B
Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 3520pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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2SK2991(Q)ToshibaMOSFET N-CH 500V 5A TO-220
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 780pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
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TPCA8022-H(TE12LQMToshibaMOSFET N-CH 100V 22A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 26 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 2330pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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2SK4015(Q)ToshibaMOSFET N-CH 600V 10A TO-220SIS
Rds On (Max) @ Id, Vgs: 860 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK3437(Q)ToshibaMOSFET N-CH 600V 10A SC-67
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
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2SK2991(SM,Q)ToshibaMOSFET N-CH 500V 5A TO-220
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 780pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
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2SK3878(F,T)ToshibaMOSFET N-CH 900V 9A SC-65
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 2200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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