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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
2SK1381(F) | Toshiba | MOSFET N-CH 100V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 32 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 88nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3700pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
TPC6104(TE85L,F,M) | Toshiba | MOSFET P-CH 20V 4.5A VS6 2-3T1A Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 19nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 1430pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 2-3T1A | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3371(TE16L1,NQ) | Toshiba | MOSFET N-CH 600V 1A SC-64 Rds On (Max) @ Id, Vgs: 9 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 190pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2993(SM,Q) | Toshiba | MOSFET N-CH 250V 20A TO-220 Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-10S1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2961(F,M) | Toshiba | MOSFET N-CH 60V 2A TO-92 Rds On (Max) @ Id, Vgs: 270 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 170pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Long Body), TO-226 | от 0,00 | Доп. информация Искать в поставщиках | |
2SK4012(Q) | Toshiba | MOSFET N-CH 500V 13A SC-67 Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2884(TE24L,Q) | Toshiba | MOSFET N-CH 800V 5A TO-220 Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1080pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: 2-10S2B | от 0,00 | Доп. информация Искать в поставщиках | |
TPCA8105(TE12L,Q,M | Toshiba | MOSFET P-CH 12V 6A SOP-8 ADV Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 18nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1600pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2233 | Toshiba | MOSFET N-CH 60V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
2SK3763(Q,M) | Toshiba | MOSFET N-CH 900V 3A TO-220AB Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 69W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
2SK3667(Q) | Toshiba | MOSFET N-CH 600V 7.5A SC-67 Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.5A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2311(TE24R,Q) | Toshiba | MOSFET N-CH 60V 25A TO-220FL Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220FL | от 0,00 | Доп. информация Искать в поставщиках | |
TPC8045-H(TE12L,QM | Toshiba | MOSFET N-CH 40V 18A 8-SOP Drain to Source Voltage (Vdss): 40V · Current - Continuous Drain (Id) @ 25° C: 18A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK3868(Q,M) | Toshiba | MOSFET N-CH 500V 5A SC-67 Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2964(TE12L) | Toshiba | MOSFET N-CH 30V 2A PW-MINI Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 140pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | Доп. информация Искать в поставщиках | ||
2SK2964(TE12L,F) | Toshiba | MOSFET N-CH 30V 2A PW-MINI Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 140pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3758(M) | Toshiba | MOSFET N-CH 500V 5A TO-220AB Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 58W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
2SK2746 | Toshiba | MOSFET N-CH 800V 7A 2-16C1B Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
2SK3132(Q) | Toshiba | MOSFET N-CH 500V 50A TO-3P(L) Rds On (Max) @ Id, Vgs: 95 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 280nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 11000pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | от 0,00 | Доп. информация Искать в поставщиках | |
2SK1382(Q) | Toshiba | MOSFET N-CH 100V 60A TO-3PL Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 176nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2838(SM,Q) | Toshiba | MOSFET N-CH 400V 5.5A TO-220SM Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10S1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2613(F) | Toshiba | MOSFET N-CH 1KV 8A 2-16C1B Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2967(F) | Toshiba | MOSFET N-CH 250V 30A 2-16C1B Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 132nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
TPC8106-H(TE12L) | Toshiba | MOSFET P-CH 30V 10A 8-SOP Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2160pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.4W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Доп. информация Искать в поставщиках | ||
TPCF8B01(TE85L,F) | Toshiba | MOSFET P-CH 20V 2.7A VS-8 Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 470pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.35W · Mounting Type: Surface Mount | от 0,00 | Доп. информация Искать в поставщиках |
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