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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 

2SK2399(TE16L1,NQ) — MOSFET N-CH 100V 5A SC-64

ПроизводительToshiba
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs230 mOhm @ 2.5A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs22nC @ 10V
Current - Continuous Drain (Id) @ 25° C5A
Input Capacitance (Ciss) @ Vds500pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max20W
Mounting TypeSurface Mount
Package / Case2-7J1B
Аналогичные по характеристикам
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2SK2610(F,T)ToshibaMOSFET N-CH 900V 5A 2-16C1B
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK2746ToshibaMOSFET N-CH 800V 7A 2-16C1B
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK3907(Q)ToshibaMOSFET N-CH 500V 23A SC-65
Rds On (Max) @ Id, Vgs: 230 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK2993(SM,Q)ToshibaMOSFET N-CH 250V 20A TO-220
Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 4000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
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2SK1381(F)ToshibaMOSFET N-CH 100V 50A 2-16C1B
Rds On (Max) @ Id, Vgs: 32 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 88nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3700pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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TK6A60D(STA4,Q,M)ToshibaMOSFET N-CH 600V 6A TO-220F
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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TPC8014(TE12L,Q,M)ToshibaMOSFET N-CH 30V 11A SOP8 2-6J1B
Rds On (Max) @ Id, Vgs: 14 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1860pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-6J1B
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TK12X60U(TE24L,Q)ToshibaMOSFET N-CH 600V 12A TFP
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 144W  ·  Mounting Type: Surface Mount
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TPC8032-H(TE12LQM)ToshibaMOSFET N-CH 30V 15A SOP8 2-6J1B
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 2846pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-6J1B
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2SK3935(Q,M)ToshibaMOSFET N-CH 450V 17A SC-67
Rds On (Max) @ Id, Vgs: 250 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 450V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 3100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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TPC8017-H(TE12LQM)TPC8017-H(TE12LQM)ToshibaMOSFET N-CH 30V 15A 8-SOP
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1465pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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TPC6107(TE85L,F,M)ToshibaMOSFET P-CH 20V 4.5A VS6 2-3T1A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 9.8nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 680pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3T1A
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TPCF8104(TE85L)ToshibaMOSFET P-CH 30V 6A VS-8
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1760pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: VS-8 (2-3U1A)
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2SK2266(TE24R,Q)ToshibaMOSFET N-CH 60V 45A 2-10S2B
Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-10S2B
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2SK2917(F)ToshibaMOSFET N-CH 500V 18A 2-16F1B
Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 3720pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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2SK1930(TE24L,Q)ToshibaMOSFET N-CH 1000V 4A TO-220
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-10S2B
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2SK2841(F)2SK2841(F)ToshibaMOSFET N-CH 400V 10A TO-220AB
Rds On (Max) @ Id, Vgs: 550 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1340pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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2SJ360(F)ToshibaMOSFET P-CH 60V 1A SC-62
Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 6.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 155pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount
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TK12D60U(Q)ToshibaMOSFET N-CH 600V 12A 2-10V1A
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 144W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10V1A
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2SK2789(TE24L)ToshibaMOSFET N-CH 100V 27A TO-220FL
Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FL
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2SK2551ToshibaMOSFET N-CH 50V 50A 2-16C1B
Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 4000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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TPC8017-H(TE12L)TPC8017-H(TE12L)ToshibaMOSFET N-CH 30V 15A 8-SOP
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1465pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK3879(TE24L,Q)ToshibaMOSFET N-CH 800V 6.5A TO-220
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-10S2B
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2SK2719(F)ToshibaMOSFET N-CH 900V 3A 2-16C1B
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK3017ToshibaMOSFET N-CH 900V 8.5A 2-16F1B
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.5A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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