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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 

2SK2266(TE24R,Q) — MOSFET N-CH 60V 45A 2-10S2B

ПроизводительToshiba
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs30 mOhm @ 25A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs60nC @ 10V
Current - Continuous Drain (Id) @ 25° C45A
Input Capacitance (Ciss) @ Vds1800pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max65W
Mounting TypeSurface Mount
Package / Case2-10S2B
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
2SK1381(F)ToshibaMOSFET N-CH 100V 50A 2-16C1B
Rds On (Max) @ Id, Vgs: 32 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 88nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3700pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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TPC6104(TE85L,F,M)ToshibaMOSFET P-CH 20V 4.5A VS6 2-3T1A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 1430pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3T1A
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2SK3371(TE16L1,NQ)ToshibaMOSFET N-CH 600V 1A SC-64
Rds On (Max) @ Id, Vgs: 9 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 190pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-7J1B
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2SK2993(SM,Q)ToshibaMOSFET N-CH 250V 20A TO-220
Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 4000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
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2SK2961(F,M)2SK2961(F,M)ToshibaMOSFET N-CH 60V 2A TO-92
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 5.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 900mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Long Body), TO-226
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2SK4012(Q)ToshibaMOSFET N-CH 500V 13A SC-67
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK2884(TE24L,Q)ToshibaMOSFET N-CH 800V 5A TO-220
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 1080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-10S2B
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TPCA8105(TE12L,Q,MToshibaMOSFET P-CH 12V 6A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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2SK2233ToshibaMOSFET N-CH 60V 45A 2-16C1B
Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK3763(Q,M)ToshibaMOSFET N-CH 900V 3A TO-220AB
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 69W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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2SK3667(Q)ToshibaMOSFET N-CH 600V 7.5A SC-67
Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK2311(TE24R,Q)ToshibaMOSFET N-CH 60V 25A TO-220FL
Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FL
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TPC8045-H(TE12L,QMTPC8045-H(TE12L,QMToshibaMOSFET N-CH 40V 18A 8-SOP
Drain to Source Voltage (Vdss): 40V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK3868(Q,M)ToshibaMOSFET N-CH 500V 5A SC-67
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK2964(TE12L)ToshibaMOSFET N-CH 30V 2A PW-MINI
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 5.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: PW-MINI
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2SK2964(TE12L,F)ToshibaMOSFET N-CH 30V 2A PW-MINI
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 5.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: PW-MINI
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2SK3758(M)ToshibaMOSFET N-CH 500V 5A TO-220AB
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 58W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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2SK2746ToshibaMOSFET N-CH 800V 7A 2-16C1B
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK3132(Q)ToshibaMOSFET N-CH 500V 50A TO-3P(L)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 280nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 11000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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2SK1382(Q)ToshibaMOSFET N-CH 100V 60A TO-3PL
Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 176nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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2SK2838(SM,Q)ToshibaMOSFET N-CH 400V 5.5A TO-220SM
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
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2SK2613(F)ToshibaMOSFET N-CH 1KV 8A 2-16C1B
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK2967(F)ToshibaMOSFET N-CH 250V 30A 2-16C1B
Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 132nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 5400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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TPC8106-H(TE12L)TPC8106-H(TE12L)ToshibaMOSFET P-CH 30V 10A 8-SOP
Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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TPCF8B01(TE85L,F)TPCF8B01(TE85L,F)ToshibaMOSFET P-CH 20V 2.7A VS-8
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 1.35W  ·  Mounting Type: Surface Mount
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