2SK2233 — MOSFET N-CH 60V 45A 2-16C1B
| ||||||||||||||||||||||||
| Войти Регистрация |
|
||||||||||||||||||||||||||
| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | TPC8048-H(TE12L,Q) | Toshiba | MOSFET N-CH 60V 16A 8-SOP Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 16A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| 2SK2967(F) | Toshiba | MOSFET N-CH 250V 30A 2-16C1B Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 132nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK2613(F) | Toshiba | MOSFET N-CH 1KV 8A 2-16C1B Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK2376(Q) | Toshiba | MOSFET N-CH 60V 45A 2-10S1B Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 3350pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-10S1B | от 0,00 | Доп. информация Искать в поставщиках | |
| TK70A06J1(Q) | Toshiba | MOSFET N-CH 60V 70A SC-67 Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 87nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 5450pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK2233(F) | Toshiba | MOSFET N-CH 60V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
| TPC8051-H(TE12L,Q) | Toshiba | MOSFET N-CH 80V 13A 8-SOP Drain to Source Voltage (Vdss): 80V · Current - Continuous Drain (Id) @ 25° C: 13A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | TPC8114(TE12L,Q,M) | Toshiba | MOSFET P-CH 30V 18A 8SOIC Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 7480pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| TPCA8003-H(TE12LQM | Toshiba | MOSFET N-CH 30V 35A SOP-8 ADV Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1465pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | от 0,00 | Доп. информация Искать в поставщиках | |
| TPC8115(TE12L,Q,M) | Toshiba | MOSFET P-CH 20V 10A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 115nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 9130pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK4105(Q,T) | Toshiba | MOSFET N-CH 500V 8A TO-220 Drain to Source Voltage (Vdss): 500V · Current - Continuous Drain (Id) @ 25° C: 8A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK3799(Q) | Toshiba | MOSFET N-CH 900V 8A SC-67 Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK3127(TE24L) | Toshiba | MOSFET N-CH 30V 45A TO-220FL Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 2300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220FL | Доп. информация Искать в поставщиках | ||
| 2SK2173(F) | Toshiba | MOSFET N-CH 60V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3550pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK3940(Q) | Toshiba | MOSFET N-CH 75V 70A SC-67 Rds On (Max) @ Id, Vgs: 7 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 12500pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK3128 | Toshiba | MOSFET N-CH 30V 60A 2-16C1B Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 2300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
| 2SK2699(F,T) | Toshiba | MOSFET N-CH 600V 12A 2-16C1B Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
| TPC8018-H(TE12LQM) | Toshiba | MOSFET N-CH 30V 18A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 2265pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | от 0,00 | Доп. информация Искать в поставщиках | |
| TPC6006-H(TE85L,F) | Toshiba | MOSFET N-CH 40V 3.9A VS6 2-3T1A Rds On (Max) @ Id, Vgs: 75 mOhm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 4.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.9A · Input Capacitance (Ciss) @ Vds: 251pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 2-3T1A | от 0,00 | Доп. информация Искать в поставщиках | |
| TPCA8036-H(TE12L,Q | Toshiba | MOSFET N-CH 30V 38A 8SOIC ADV Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 19A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 38A · Input Capacitance (Ciss) @ Vds: 4600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 8-SOIC | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK2776(TE24L) | Toshiba | MOSFET N-CH 500V 8A TO-220FL Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220FL | от 0,00 | Доп. информация Искать в поставщиках | |
| TK15A50D(Q,M) | Toshiba | MOSFET N-CH 500V 15A SC-67 Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 2300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK3669(TE16L1,NQ) | Toshiba | MOSFET N-CH 100V 10A PW-MOLD Rds On (Max) @ Id, Vgs: 125 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 480pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK4003(Q) | Toshiba | MOSFET N-CH 600V 3A PW-MOLD Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Through Hole | от 0,00 | Доп. информация Искать в поставщиках | |
| TPC8A03-H(TE12LQM) | Toshiba | MOSFET N-CH SBD 17A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 8.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 3430pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | от 0,00 | Доп. информация Искать в поставщиках |
| © 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |
