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2SK1530-Y(F) — MOSFET N-CH 200V 12A TO-3PL
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | 2SK2231(TE16L1,NQ) | Toshiba | MOSFET N-CH 60V 5A 2-7J1B Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 370pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | от 0,00 | Доп. информация Искать в поставщиках |
| 2SK4111(Q,T) | Toshiba | MOSFET N-CH 600V 10A SC-67 Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10R1B | от 0,00 | Доп. информация Искать в поставщиках | |
| TPC8033-H(TE12LQM) | Toshiba | MOSFET N-CH 30V 17A SOP8 2-6J1B Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 17A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 2-6J1B | от 0,00 | Доп. информация Искать в поставщиках | |
| TPC6006-H(TE85L,F) | Toshiba | MOSFET N-CH 40V 3.9A VS6 2-3T1A Rds On (Max) @ Id, Vgs: 75 mOhm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 4.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.9A · Input Capacitance (Ciss) @ Vds: 251pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 2-3T1A | от 0,00 | Доп. информация Искать в поставщиках | |
 | TPC6101(TE85L,F) | Toshiba | MOSFET P-CH SNGL -20V -4.5A VS-6 Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 12nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 830pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: VS-6 (SOT-23-6) | Доп. информация Искать в поставщиках | |
| 2SK2746(F,T) | Toshiba | MOSFET N-CH 800V 7A 2-16C1B Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
| TPCF8B01(TE85L,F,M | Toshiba | MOSFET P-CH SBD 20V 2.7A 2-3U1C Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 470pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.35W · Mounting Type: Surface Mount | от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK2267(Q) | Toshiba | MOSFET N-CH 60V 60A TO-3P(L) Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | от 0,00 | Доп. информация Искать в поставщиках | |
| TPCA8019-H(TE12LQM | Toshiba | MOSFET N-CH 30V 45A SOP-8 ADV Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 6150pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | 2SK2232(T) | Toshiba | MOSFET N-CH 60V 25A 2-10R1B Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: 2-10R1B | Доп. информация Искать в поставщиках | |
| TK20J60U(F) | Toshiba | MOSFET N-CH 600V 20A TO-3PN Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1470pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-3P | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | TPC8009-H(TE12L) | Toshiba | MOSFET N-CH 30V 13A 8-SOP Rds On (Max) @ Id, Vgs: 10 mOhm @ 6.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 1460pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Доп. информация Искать в поставщиках | |
| 2SK2777(TE24L,Q) | Toshiba | MOSFET N-CH 600V 6A TO-220SM Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Surface Mount · Package / Case: 2-10S2B | от 0,00 | Доп. информация Искать в поставщиках | |
| TPCA8106(TE12L,Q,M | Toshiba | MOSFET P-CH 30V 40A 8-SOP ADV Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 40A · FET Polarity: P-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | TPCP8002(TE85L,F) | Toshiba | MOSFET N-CH 20V 9.1A PS8 Rds On (Max) @ Id, Vgs: 10 mOhm @ 4.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 48nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9.1A · Input Capacitance (Ciss) @ Vds: 3700pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 840mW · Mounting Type: Surface Mount · Package / Case: 2-3V1K | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| 2SK3017 | Toshiba | MOSFET N-CH 900V 8.5A 2-16F1B Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.5A · Input Capacitance (Ciss) @ Vds: 2150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: 2-16F1B | Доп. информация Искать в поставщиках | ||
| 2SK3935(Q,M) | Toshiba | MOSFET N-CH 450V 17A SC-67 Rds On (Max) @ Id, Vgs: 250 mOhm @ 8.5A, 10V · Drain to Source Voltage (Vdss): 450V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 3100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
 | 2SK2698(F,T) | Toshiba | MOSFET N-CH 500V 15A 2-16C1B Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 2600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | TPCA8016-H(TE12LQM | Toshiba | MOSFET N-CH 60V 25A 8-SOPA Rds On (Max) @ Id, Vgs: 21 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1375pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 8-SOPA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| 2SK2847(F) | Toshiba | MOSFET N-CH 900V 8A 2-16F1B Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2040pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 85W · Mounting Type: Through Hole · Package / Case: 2-16F1B | от 0,00 | Доп. информация Искать в поставщиках | |
 | 2SK2231(Q) | Toshiba | MOSFET N-CH 60V 5A 2-7B1B Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 370pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Through Hole · Package / Case: 2-7B1B | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | 2SK3568(Q,M) | Toshiba | MOSFET N-CH 500V 12A TO-220SIS Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| 2SK2719 | Toshiba | MOSFET N-CH 900V 3A 2-16C1B Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
 | TPC6109-H(TE85L,F) | Toshiba | MOSFET P-CH 30V 5A VS-6 Rds On (Max) @ Id, Vgs: 59 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 12.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 490pf @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 2-3T1A | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| 2SK3799(Q) | Toshiba | MOSFET N-CH 900V 8A SC-67 Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках |
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