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2N7002E-T1-E3 — MOSFET N-CH 60V 240MA SOT-23
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| IRFU9014 | Vishay/Siliconix | MOSFET P-CH 60V 5.1A I-PAK Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 270pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRLZ44STRL | Vishay/Siliconix | MOSFET N-CH 60V 50A D2PAK Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 66nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3300pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SIA810DJ-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 4.5A SC-70-6 Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11.5nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 400pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 6.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 Dual | Доп. информация Искать в поставщиках | |
 | SI5403DC-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 30V 6A 1206-8 Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1340pF @ 15V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 6.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRF520 | Vishay/Siliconix | MOSFET N-CH 100V 9.2A TO-220AB Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.2A · Input Capacitance (Ciss) @ Vds: 360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF710L | Vishay/Siliconix | MOSFET N-CH 400V 2A TO-262 Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 170pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
 | SI1419DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 200V 300MA SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 400mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 6.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 300mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4418DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 200V 2.3A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI5853DC-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 2.7A 1206-8 Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.7A · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRL540L | Vishay/Siliconix | MOSFET N-CH 100V 28A TO-262 Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 64nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 2200pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRFR9120TRLPBF | Vishay/Siliconix | MOSFET P-CH 100V 5.6A DPAK Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · Input Capacitance (Ciss) @ Vds: 390pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRF730AS | Vishay/Siliconix | MOSFET N-CH 400V 5.5A D2PAK Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFU420PBF | Vishay/Siliconix | MOSFET N-CH 500V 2.4A I-PAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF9540PBF | Vishay/Siliconix | MOSFET P-CH 100V 19A TO-220AB Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 61nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7456DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 100V 5.7A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.7A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF530STRL | Vishay/Siliconix | MOSFET N-CH 100V 14A D2PAK Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 670pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI4170DY-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 30V 30A 8-SOIC Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 4355pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRLI520GPBF | Vishay/Siliconix | MOSFET N-CH 100V 7.2A TO220FP Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.3A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 12nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 7.2A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 37W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF9610STRR | Vishay/Siliconix | MOSFET P-CH 200V 1.8A D2PAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 900mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 170pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF720L | Vishay/Siliconix | MOSFET N-CH 400V 3.3A TO-262 Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.3A · Input Capacitance (Ciss) @ Vds: 410pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRL3103D2STRR | Vishay/Siliconix | MOSFET N-CH 30V 54A D2PAK Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 54A · Input Capacitance (Ciss) @ Vds: 2300pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IRFBC20 | Vishay/Siliconix | MOSFET N-CH 600V 2.2A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF740LCL | Vishay/Siliconix | MOSFET N-CH 400V 10A TO-262 Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| SI7463DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 40V 11A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFR9014TRR | Vishay/Siliconix | MOSFET P-CH 60V 5.1A DPAK Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 270pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
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