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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
2N7002_D87Z

2N7002_D87Z — MOSFET N-CH 60V 115MA SOT-23

ПроизводительFairchild Semiconductor
Вредные веществаRoHS   Без свинца
Обратите вниманиеMold Compound Change 12 дек 2007
Rds On (Max) @ Id, Vgs7.5 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C115mA
Input Capacitance (Ciss) @ Vds50pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
2N7002_NB9G002Fairchild SemiconductorMOSFET N-CH 60V 115MA SOT-23
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.6A  ·  Input Capacitance (Ciss) @ Vds: 1680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 167W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.6A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 230 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 142W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Серия: SuperFET™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 110W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FQB10N20TMFairchild SemiconductorMOSFET N-CH 200V 10A D2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 360 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSS138_L99ZBSS138_L99ZFairchild SemiconductorMOSFET N-CH 50V 220MA SOT-23
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 2.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 220mA  ·  Input Capacitance (Ciss) @ Vds: 27pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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FCA16N60_F109Fairchild SemiconductorMOSFET N-CH 600V 16A TO-3P
Серия: SuperFET™  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 2250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 167W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3PN-3
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 63 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16.8A  ·  Input Capacitance (Ciss) @ Vds: 590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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HUF75623P3HUF75623P3Fairchild SemiconductorMOSFET N-CH 100V 22A TO-220AB
Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 64 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 790pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 85W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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FQD6N50CTFFQD6N50CTFFairchild SemiconductorMOSFET N-CH 500V 4.5A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FQP17P10FQP17P10Fairchild SemiconductorMOSFET P-CH 100V 16.5A TO-220
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16.5A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFW630BTM_FP001Fairchild SemiconductorMOSFET N-CH 200V 9A D2PAK
Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FDC6392SFDC6392SFairchild SemiconductorMOSFET P-CH 20V 2.2A SSOT-6
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 5.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 369pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-SSOT, SuperSOT-6
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IRFR230BTM_AM002IRFR230BTM_AM002Fairchild SemiconductorMOSFET N-CH 200V 7.5A DPAK
Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.75A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FQD3P50TFFQD3P50TFFairchild SemiconductorMOSFET P-CH 500V 2.1A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1.05A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.1A  ·  Input Capacitance (Ciss) @ Vds: 660pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FDI040N06Fairchild SemiconductorMOSFET N-CH 60V 120A I2PAK
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 133nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 120A  ·  Input Capacitance (Ciss) @ Vds: 8235pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 231W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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FDD6760AFDD6760AFairchild SemiconductorMOSFET N-CH 25V 27A DPAK
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 27A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 3170pF @ 13V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FDMA420NZFDMA420NZFairchild SemiconductorMOSFET N-CH 20V 5.7A MICROFET
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.7A  ·  Input Capacitance (Ciss) @ Vds: 935pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-MLP, 6-MicroFET™
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FDD6N50TM_WSFDD6N50TM_WSFairchild SemiconductorMOSFET N-CH 500V 6A DPAK
Серия: UniFET™  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 16.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 940pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 89W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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FDS3680Fairchild SemiconductorMOSFET N-CH 100V 5.2A 8-SOIC
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 46 mOhm @ 5.2A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  Input Capacitance (Ciss) @ Vds: 1735pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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FQB32N12V2TMFairchild SemiconductorMOSFET N-CH 120V 32A D2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 120V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 1860pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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