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2N7000BU — MOSFET N-CH 60V 200MA TO-92
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| FQA24N50F | Fairchild Semiconductor | MOSFET N-CH 500V 24A TO-3P Серия: FRFET™ · Rds On (Max) @ Id, Vgs: 200 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 4500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 290W · Mounting Type: Through Hole · Package / Case: TO-3PN-3 | от 0,00 | Доп. информация Искать в поставщиках | |
 | FQP3P20 | Fairchild Semiconductor | MOSFET P-CH 200V 2.8A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| HUFA76645S3ST | Fairchild Semiconductor | MOSFET N-CH 100V 75A D2PAK Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 153nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 4400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 310W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| FDP75N08 | Fairchild Semiconductor | MOSFET N-CH 75V 75A TO-220 Серия: UniFET™ · Rds On (Max) @ Id, Vgs: 11 mOhm @ 37.5A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 104nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 4468pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 137W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
 | FDPF10N50FT | Fairchild Semiconductor | MOSFET N-CH 500V 9A TO-220F Серия: UniFET™ · Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 1170pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FQPF4N50 | Fairchild Semiconductor | MOSFET N-CH 500V 2.3A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.15A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 460pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | Доп. информация Искать в поставщиках | |
| FQA160N08 | Fairchild Semiconductor | MOSFET N-CH 80V 160A TO-3P Серия: QFET™ · Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 290nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 160A · Input Capacitance (Ciss) @ Vds: 7900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 375W · Mounting Type: Through Hole · Package / Case: TO-3PN-3 | от 0,00 | Доп. информация Искать в поставщиках | |
| FDD6637_F085 | Fairchild Semiconductor | MOSFET P-CH 35V 13A DPAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 35V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 2370pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | FDB024N06 | Fairchild Semiconductor | MOSFET N-CH 60V 120A D2PAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 226nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 14885pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 395W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FQD19N10LTF | Fairchild Semiconductor | MOSFET N-CH 100V 15.6A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 18nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 15.6A · Input Capacitance (Ciss) @ Vds: 870pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
| FDA20N50_F109 | Fairchild Semiconductor | MOSFET N-CH 500V 22A TO-3P Серия: UniFET™ · Rds On (Max) @ Id, Vgs: 230 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 59.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 3120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-3P | от 0,00 | Доп. информация Искать в поставщиках | |
 | FDN335N | Fairchild Semiconductor | MOSFET N-CH 20V 1.7A SSOT3 Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 310pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 460mW · Mounting Type: Surface Mount · Package / Case: 3-SSOT, SuperSOT-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FDFS6N548 | Fairchild Semiconductor | MOSFET N-CH 30V 7A 8-SOIC Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 700pF @ 15V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| FQD17N08LTF | Fairchild Semiconductor | MOSFET N-CH 80V 12.9A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 6.45A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 11.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12.9A · Input Capacitance (Ciss) @ Vds: 520pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
| FQB7N60TM | Fairchild Semiconductor | MOSFET N-CH 600V 7.4A D2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.4A · Input Capacitance (Ciss) @ Vds: 1430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.13W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRLS640A | Fairchild Semiconductor | MOSFET N-CH 200V 9.8A TO-220F Rds On (Max) @ Id, Vgs: 180 mOhm @ 4.9A, 5V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 56nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9.8A · Input Capacitance (Ciss) @ Vds: 1705pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFU220BTU_FP001 | Fairchild Semiconductor | MOSFET N-CH 200V 4.6A IPAK Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.6A · Input Capacitance (Ciss) @ Vds: 390pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| FQP1N50 | Fairchild Semiconductor | MOSFET N-CH 500V 1.4A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 9 Ohm @ 700mA, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 5.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
| FQB2N30TM | Fairchild Semiconductor | MOSFET N-CH 300V 2.1A D2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 1.05A, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.1A · Input Capacitance (Ciss) @ Vds: 130pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.13W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | FQU11P06TU | Fairchild Semiconductor | MOSFET P-CH 60V 9.4A IPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 185 mOhm @ 4.7A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.4A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| HUF76609D3 | Fairchild Semiconductor | MOSFET N-CH 100V 10A TO-251AA Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 425pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 49W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| FQPF5N15 | Fairchild Semiconductor | MOSFET N-CH 150V 4.2A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.1A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.2A · Input Capacitance (Ciss) @ Vds: 230pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
 | FDT434P | Fairchild Semiconductor | MOSFET P-CH 20V 6A SOT-223 Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 19nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1187pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| FDB2670 | Fairchild Semiconductor | MOSFET N-CH 200V 19A TO-263AB Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 1320pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 93W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
| FQB9N15TM | Fairchild Semiconductor | MOSFET N-CH 150V 9A D2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 410pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках |
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