Производитель: International Rectifier  •  Вредные вещества: RoHS   Без свинца  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 59nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 5.8A  •  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 2.5W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)