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IRF7406PBF — MOSFET P-CH 30V 5.8A 8-SOIC
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | IRF630NL | International Rectifier | MOSFET N-CH 200V 9.3A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 575pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 82W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF1310NPBF | International Rectifier | MOSFET N-CH 100V 42A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFR3303TRL | International Rectifier | MOSFET N-CH 30V 33A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 57W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
 | IRL7833STRRPBF | International Rectifier | MOSFET N-CH 30V 150A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 47nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 150A · Input Capacitance (Ciss) @ Vds: 4170pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR2405PBF | International Rectifier | MOSFET N-CH 55V 56A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 56A · Input Capacitance (Ciss) @ Vds: 2430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF6715MTR1PBF | International Rectifier | MOSFET N-CH 25V 34A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 59nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 5340pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.8W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric MX | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRF7807VPBF | International Rectifier | MOSFET N-CH 30V 8.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFPS3815PBF | International Rectifier | MOSFET N-CH 150V 105A SUPER247 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 63A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 390nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 105A · Input Capacitance (Ciss) @ Vds: 6810pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 441W · Mounting Type: Through Hole · Package / Case: Super-247-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF7473 | International Rectifier | MOSFET N-CH 100V 6.9A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 61nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.9A · Input Capacitance (Ciss) @ Vds: 3180pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFIZ34EPBF | International Rectifier | MOSFET N-CH 60V 21A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 37W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF3708STRR | International Rectifier | MOSFET N-CH 30V 62A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 24nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 62A · Input Capacitance (Ciss) @ Vds: 2417pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 87W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IRF5210LPBF | International Rectifier | MOSFET P-CH 100V 38A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 230nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 38A · Input Capacitance (Ciss) @ Vds: 2780pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: TO-262 | от 0,00 | Доп. информация Искать в поставщиках | |
| SI4410DYTR | International Rectifier | MOSFET N-CH 30V 10A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1585pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF7807TR | International Rectifier | MOSFET N-CH 30V 8.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | |
 | IRFU3910PBF | International Rectifier | MOSFET N-CH 100V 16A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 79W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFBA1404P | International Rectifier | MOSFET N-CH 40V 206A SUPER-220 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 95A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 206A · Input Capacitance (Ciss) @ Vds: 7360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: Super-220™-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| SI4420DY | International Rectifier | MOSFET N-CH 30V 12.5A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12.5A · Input Capacitance (Ciss) @ Vds: 2240pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFR9024NTRR | International Rectifier | MOSFET P-CH 55V 11A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRLR8711CTRPBF | International Rectifier | MOSFET N-CH 25V 84A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 1640pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFR2905ZTRL | International Rectifier | MOSFET N-CH 55V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR2407TR | International Rectifier | MOSFET N-CH 75V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRFIZ48NPBF | International Rectifier | MOSFET N-CH 55V 40A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 54W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRLR7821CTRPBF | International Rectifier | MOSFET N-CH 30V 65A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 1030pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 75W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFU024N | International Rectifier | MOSFET N-CH 55V 17A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF530NSPBF | International Rectifier | MOSFET N-CH 100V 17A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
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