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SI1499DH-T1-E3 — MOSFET P-CH 8V 1.6A SC70-6
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI3467DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 3.8A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7136DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 30A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 3380pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 39W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7374DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 24A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 122nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 5500pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 56W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7636DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 17A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 5600pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7386DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 12A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 19A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1488DH-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 6.1A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 49 mOhm @ 4.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.01nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.1A · Input Capacitance (Ciss) @ Vds: 530pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.8W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4848DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 150V 2.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI2325DS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 150V 530MA SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 530mA · Input Capacitance (Ciss) @ Vds: 510pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI1403BDL-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 1.4A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 4.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.4A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 568mW · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7476DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 40V 15A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 177nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM33N20-60P-E3 | Vishay/Siliconix | MOSFET N-CH 200V 33A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 59 mOhm @ 20A, 15V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 113nC @ 15V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 2735pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.12W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI8402DB-T1-E1 | Vishay/Siliconix | MOSFET N-CH 20V 5.3A 2X2 4-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 26nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.3A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.47W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIE800DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 50A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1600pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (S) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI9424BDY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 5.6A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 40nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.6A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3499DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 8V 5.3A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 42nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.3A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI5856DC-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 4.4A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.4A · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4378DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 19A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 55nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 8500pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4401BDY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 40V 8.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.5A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 55nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7806ADN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 9A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI1469DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 2.7A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 470pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.78W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI8401DB-T1-E1 | Vishay/Siliconix | MOSFET P-CH 20V 3.6A 2X2 4-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.6A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.47W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI5482DU-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 12A PPAK CHIPFET Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 51nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1610pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 31W · Mounting Type: Surface Mount · Package / Case: PowerPAK® ChipFET Single | Доп. информация Искать в поставщиках | ||
| SI7850DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 6.2A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 22 mOhm @ 10.3A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.2A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7491DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 11A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 85nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7409ADN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 7A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 19 mOhm @ 11A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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