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SI1469DH-T1-E3 — MOSFET P-CH 20V 2.7A SC70-6
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI1419DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 200V 300MA SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 400mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 6.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 300mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7456DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 100V 5.7A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.7A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4418DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 200V 2.3A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7463DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 40V 11A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI1426DH-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 2.8A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 3nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.8A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3440DV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 150V 1.2A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 375 mOhm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.2A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4420BDY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 9.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.4W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI2319DS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 40V 2.3A SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 82 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 470pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI1433DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 1.9A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.9A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 950mW · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3437DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 150V 1.4A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 510pF @ 50V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI6415DQ-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 6.5A 8-TSSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI1450DH-T1-E3 | Vishay/Siliconix | MOSFET N-CH 8V 6.04A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 7.05nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.04A · Input Capacitance (Ciss) @ Vds: 535pF @ 4V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.78W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7116DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 40V 10.5A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 16.4A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 23nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7108DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 14A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 30nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 14A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4322DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 18A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1640pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 5.4W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7450DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 200V 3.2A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1300BDL-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 400MA SOT323-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.84nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 400mA · Input Capacitance (Ciss) @ Vds: 35pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7485DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 12.5A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 150nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12.5A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3457BDV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 3.7A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM110N06-3M4L-E3 | Vishay/Siliconix | MOSFET N-CH 60V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 12900pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3493BDV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 8A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 43.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1805pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.97W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIE810DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 60A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 25A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 13000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (L) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM90N08-4M8P-E3 | Vishay/Siliconix | MOSFET N-CH 75V 90A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 6460pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3454ADV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 3.4A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7866ADP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 40A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 125nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 5415pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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