Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRLZ24NPBF — MOSFET N-CH 55V 18A TO-220AB

Производитель	International Rectifier
Вредные вещества	RoHS Без свинца

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	60 mOhm @ 11A, 10V
Drain to Source Voltage (Vdss)	55V
Gate Charge (Qg) @ Vgs	15nC @ 5V
Current - Continuous Drain (Id) @ 25° C	18A
Input Capacitance (Ciss) @ Vds	480pF @ 25V
FET Polarity	N-Channel
FET Feature	Logic Level Gate
Power - Max	45W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Встречается под наим.	*IRLZ24NPBF

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRLR3802PBF	International Rectifier	MOSFET N-CH 12V 84A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 41nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 2490pF @ 6V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF630NL	International Rectifier	MOSFET N-CH 200V 9.3A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 575pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 82W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRFZ48V	International Rectifier	MOSFET N-CH 60V 72A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 72A · Input Capacitance (Ciss) @ Vds: 1985pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRFP048N	International Rectifier	MOSFET N-CH 55V 64A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 37A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 64A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC		Доп. информация Искать в поставщиках
	IRL2203NS	International Rectifier	MOSFET N-CH 30V 116A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 116A · Input Capacitance (Ciss) @ Vds: 3290pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	SI4410DYPBF	International Rectifier	MOSFET N-CH 30V 10A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1585pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRFR2407TRRPBF	International Rectifier	MOSFET N-CH 75V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF1310NPBF	International Rectifier	MOSFET N-CH 100V 42A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF9530NSTRR	International Rectifier	MOSFET P-CH 100V 14A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 760pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF7831TR	International Rectifier	MOSFET N-CH 30V 21A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 6240pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF1324LPBF	International Rectifier	MOSFET N-CH 24V 195A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.65 mOhm @ 195A, 10V · Drain to Source Voltage (Vdss): 24V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 195A · Input Capacitance (Ciss) @ Vds: 7590pF @ 24V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-262	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRL1404ZLPBF	International Rectifier	MOSFET N-CH 40V 75A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 110nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5080pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-262	от 0,00	Доп. информация Искать в поставщиках
	IRFR3711PBF	International Rectifier	MOSFET N-CH 20V 100A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFR2905ZTR	International Rectifier	MOSFET N-CH 55V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFR2405PBF	International Rectifier	MOSFET N-CH 55V 56A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 56A · Input Capacitance (Ciss) @ Vds: 2430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF7832TRPBF	International Rectifier	MOSFET N-CH 30V 20A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 51nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4310pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLU3114ZPBF	International Rectifier	MOSFET N-CH 40V 42A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 56nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 3810pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7807VPBF	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRLU3714PBF	International Rectifier	MOSFET N-CH 20V 36A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 9.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 36A · Input Capacitance (Ciss) @ Vds: 670pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF2204LPBF	International Rectifier	MOSFET N-CH 40V 170A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 130A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170A · Input Capacitance (Ciss) @ Vds: 5890pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7493	International Rectifier	MOSFET N-CH 80V 9.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 1510pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7854TRPBF	International Rectifier	MOSFET N-CH 80V 10A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SO-8	от 0,00	Доп. информация Искать в поставщиках
	IRFP140NPBF	International Rectifier	MOSFET N-CH 100V 33A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 52 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 94nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFU3711	International Rectifier	MOSFET N-CH 20V 100A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)		Доп. информация Искать в поставщиках
	IRFPS3815PBF	International Rectifier	MOSFET N-CH 150V 105A SUPER247 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 63A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 390nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 105A · Input Capacitance (Ciss) @ Vds: 6810pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 441W · Mounting Type: Through Hole · Package / Case: Super-247-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках

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