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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
IRFZ48V

IRFZ48V — MOSFET N-CH 60V 72A TO-220AB

ПроизводительInternational Rectifier
СерияHEXFET®
Rds On (Max) @ Id, Vgs12 mOhm @ 43A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs110nC @ 10V
Current - Continuous Drain (Id) @ 25° C72A
Input Capacitance (Ciss) @ Vds1985pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max150W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Встречается под наим.*IRFZ48V
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Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 116A  ·  Input Capacitance (Ciss) @ Vds: 3290pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF7241PBFIRF7241PBFInternational RectifierMOSFET P-CH 40V 6.2A 8-SOIC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 41 mOhm @ 6.2A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.2A  ·  Input Capacitance (Ciss) @ Vds: 3220pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRF1324LPBFIRF1324LPBFInternational RectifierMOSFET N-CH 24V 195A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1.65 mOhm @ 195A, 10V  ·  Drain to Source Voltage (Vdss): 24V  ·  Gate Charge (Qg) @ Vgs: 240nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 195A  ·  Input Capacitance (Ciss) @ Vds: 7590pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262
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IRFR2905ZTRIRFR2905ZTRInternational RectifierMOSFET N-CH 55V 42A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 1380pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRLU3114ZPBFIRLU3114ZPBFInternational RectifierMOSFET N-CH 40V 42A I-PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 56nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 3810pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRL3714ZSPBFIRL3714ZSPBFInternational RectifierMOSFET N-CH 20V 36A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 7.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 36A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFU3709Z-701PInternational RectifierMOSFET N-CH 30V 86A IPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 86A  ·  Input Capacitance (Ciss) @ Vds: 2330pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 79W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRL8113PBFIRL8113PBFInternational RectifierMOSFET N-CH 30V 105A TO-220AB
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 105A  ·  Input Capacitance (Ciss) @ Vds: 2840pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 110W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFBA1405PPBFIRFBA1405PPBFInternational RectifierMOSFET N-CH 55V 174A SUPER-220
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 101A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 174A  ·  Input Capacitance (Ciss) @ Vds: 5480pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 330W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-220™-3 (Straight Leads)
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IRFR3505TRRPBFIRFR3505TRRPBFInternational RectifierMOSFET N-CH 55V 30A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 93nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2030pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFSL4227PBFIRFSL4227PBFInternational RectifierMOSFET N-CH 200V 62A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 46A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 98nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 62A  ·  Input Capacitance (Ciss) @ Vds: 4600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 330W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262
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IRFR024NTRPBFIRFR024NTRPBFInternational RectifierMOSFET N-CH 55V 17A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFI530NPBFIRFI530NPBFInternational RectifierMOSFET N-CH 100V 12A TO220FP
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 640pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 41W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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IRLR3715TRRPBFIRLR3715TRRPBFInternational RectifierMOSFET N-CH 20V 54A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 1060pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF1310NSTRLIRF1310NSTRLInternational RectifierMOSFET N-CH 100V 42A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF8721GPBFInternational RectifierMOSFET N-CH 30V 14A 8-SOIC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1040pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC
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IRLZ44NSTRLPBFIRLZ44NSTRLPBFInternational RectifierMOSFET N-CH 55V 47A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF1010NPBFIRF1010NPBFInternational RectifierMOSFET N-CH 55V 85A TO-220AB
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 85A  ·  Input Capacitance (Ciss) @ Vds: 3210pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 180W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRL3705NSPBFIRL3705NSPBFInternational RectifierMOSFET N-CH 55V 89A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 98nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 89A  ·  Input Capacitance (Ciss) @ Vds: 3600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF7478PBFIRF7478PBFInternational RectifierMOSFET N-CH 60V 7A 8-SOIC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRF1010ESTRRIRF1010ESTRRInternational RectifierMOSFET N-CH 60V 84A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 84A  ·  Input Capacitance (Ciss) @ Vds: 3210pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 200W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRLZ44NLPBFIRLZ44NLPBFInternational RectifierMOSFET N-CH 55V 47A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262-3 (Straight Leads)
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IRF4905STRRPBFIRF4905STRRPBFInternational RectifierMOSFET P-CH 55V 42A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRLR2703TRIRLR2703TRInternational RectifierMOSFET N-CH 30V 23A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF1607IRF1607International RectifierMOSFET N-CH 75V 142A TO-220AB
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 85A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 320nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 142A  ·  Input Capacitance (Ciss) @ Vds: 7750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 380W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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