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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
IRLR3802PBF | International Rectifier | MOSFET N-CH 12V 84A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 41nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 2490pF @ 6V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRF5803 | International Rectifier | MOSFET P-CH 40V 3.4A 6-TSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 1110pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | Доп. информация Искать в поставщиках | ||
IRF630NL | International Rectifier | MOSFET N-CH 200V 9.3A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.3A · Input Capacitance (Ciss) @ Vds: 575pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 82W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
IRL3705NSTRRPBF | International Rectifier | MOSFET N-CH 55V 89A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 98nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 89A · Input Capacitance (Ciss) @ Vds: 3600pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFZ48V | International Rectifier | MOSFET N-CH 60V 72A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 72A · Input Capacitance (Ciss) @ Vds: 1985pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFS33N15D | International Rectifier | MOSFET N-CH 150V 33A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 90nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 2020pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IRLR7833TRLPBF | International Rectifier | MOSFET N-CH 30V 140A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 140A · Input Capacitance (Ciss) @ Vds: 4010pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR2407TRRPBF | International Rectifier | MOSFET N-CH 75V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRF1310NPBF | International Rectifier | MOSFET N-CH 100V 42A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFR2307Z | International Rectifier | MOSFET N-CH 75V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 75nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2190pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
IRFR13N15DTRPBF | International Rectifier | MOSFET N-CH 150V 14A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 86W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRLZ34NSTRR | International Rectifier | MOSFET N-CH 55V 30A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 25nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 880pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRL1404ZLPBF | International Rectifier | MOSFET N-CH 40V 75A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 110nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5080pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-262 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR3303TRL | International Rectifier | MOSFET N-CH 30V 33A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 57W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR3711PBF | International Rectifier | MOSFET N-CH 20V 100A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR2905ZTR | International Rectifier | MOSFET N-CH 55V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRL7833STRRPBF | International Rectifier | MOSFET N-CH 30V 150A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 47nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 150A · Input Capacitance (Ciss) @ Vds: 4170pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR2405PBF | International Rectifier | MOSFET N-CH 55V 56A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 56A · Input Capacitance (Ciss) @ Vds: 2430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRF7832TRPBF | International Rectifier | MOSFET N-CH 30V 20A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 51nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4310pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRLU3114ZPBF | International Rectifier | MOSFET N-CH 40V 42A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 56nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 3810pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF6715MTR1PBF | International Rectifier | MOSFET N-CH 25V 34A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 59nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 5340pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.8W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric MX | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRLI530N | International Rectifier | MOSFET N-CH 100V 12A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A. 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 34nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 41W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | Доп. информация Искать в поставщиках | ||
IRF7807VPBF | International Rectifier | MOSFET N-CH 30V 8.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
IRLU3714PBF | International Rectifier | MOSFET N-CH 20V 36A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 9.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 36A · Input Capacitance (Ciss) @ Vds: 670pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFU3711 | International Rectifier | MOSFET N-CH 20V 100A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках |
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