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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT20M22B2VFRG — MOSFET N-CH 200V 100A T-MAX

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
СерияPOWER MOS V®
Rds On (Max) @ Id, Vgs22 mOhm @ 500mA, 10V
Drain to Source Voltage (Vdss)200V
Gate Charge (Qg) @ Vgs435nC @ 10V
Current - Continuous Drain (Id) @ 25° C100A
Input Capacitance (Ciss) @ Vds10200pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max520W
Mounting TypeThrough Hole
Package / CaseT-MAX
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT6011LVRGMicrosemi-PPGMOSFET N-CH 600V 49A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 24.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 450nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 8900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10025JVRMicrosemi-PPGMOSFET N-CH 1000V 34A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 990nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 18000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6030BVFRGMicrosemi-PPGMOSFET N-CH 600V 21A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 3750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 298W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M40BVRGMicrosemi-PPGMOSFET N-CH 200V 59A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 59A  ·  Input Capacitance (Ciss) @ Vds: 4860pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT5014LVFRGMicrosemi-PPGMOSFET N-CH 500V 37A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 18.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 350nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 6720pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6035BVRGMicrosemi-PPGMOSFET N-CH 600V 18A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 4140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT30M40LVFRGMicrosemi-PPGMOSFET N-CH 300V 76A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 76A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6015B2VRGMicrosemi-PPGMOSFET N-CH 600V 38A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5014LVRGMicrosemi-PPGMOSFET N-CH 500V 37A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 350nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 6720pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT30M40JVFRMicrosemi-PPGMOSFET N-CH 300V 70A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10M19BVFRGMicrosemi-PPGMOSFET N-CH 100V 75A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 37.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10050JVRMicrosemi-PPGMOSFET N-CH 1000V 19A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10M11LVFRGMicrosemi-PPGMOSFET N-CH 100V 100A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 450nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT50M60JVFRMicrosemi-PPGMOSFET N-CH 500V 63A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 31.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 560nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 63A  ·  Input Capacitance (Ciss) @ Vds: 10600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 568W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6035SVRGMicrosemi-PPGMOSFET N-CH 600V 18A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 4140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT6025SVRGMicrosemi-PPGMOSFET N-CH 600V 25A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 5160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT6035BVFRGMicrosemi-PPGMOSFET N-CH 600V 18A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 4140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M18B2VRGMicrosemi-PPGMOSFET N-CH 200V 100A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 330nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9880pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT4012BVFRGMicrosemi-PPGMOSFET N-CH 400V 37A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M38SVRGMicrosemi-PPGMOSFET N-CH 200V 67A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 6120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT10M07JVFRMicrosemi-PPGMOSFET N-CH 100V 225A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 1050nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 225A  ·  Input Capacitance (Ciss) @ Vds: 21600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M22JVFRMicrosemi-PPGMOSFET N-CH 200V 97A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 97A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT50M80B2VFRGMicrosemi-PPGMOSFET N-CH 500V 58A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 423nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 8797pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M22LVFRGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT5010JVRMicrosemi-PPGMOSFET N-CH 500V 44A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 470nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 8900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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