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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT20M22LVFRG — MOSFET N-CH 200V 100A TO-264

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
СерияPOWER MOS V®
Rds On (Max) @ Id, Vgs22 mOhm @ 500mA, 10V
Drain to Source Voltage (Vdss)200V
Gate Charge (Qg) @ Vgs435nC @ 10V
Current - Continuous Drain (Id) @ 25° C100A
Input Capacitance (Ciss) @ Vds10200pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max520W
Mounting TypeThrough Hole
Package / CaseTO-264
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT12040JVFRMicrosemi-PPGMOSFET N-CH 1200V 26A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 1200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 18000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10040B2VRGMicrosemi-PPGMOSFET N-CH 1000V 25A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 630nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M11JVFRMicrosemi-PPGMOSFET N-CH 200V 175A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 175A  ·  Input Capacitance (Ciss) @ Vds: 21600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT30M85BVFRGMicrosemi-PPGMOSFET N-CH 300V 40A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 4950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8030JVFRMicrosemi-PPGMOSFET N-CH 800V 25A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 510nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT5024BVFRGMicrosemi-PPGMOSFET N-CH 500V 22A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 221nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 4320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT5017BVRGMicrosemi-PPGMOSFET N-CH 500V 30A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 5280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10M19SVFRGMicrosemi-PPGMOSFET N-CH 100V 75A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 37.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT20M22LVRGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT5010B2VRGMicrosemi-PPGMOSFET N-CH 500V 47A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 470nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 8900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT6025SVFRGMicrosemi-PPGMOSFET N-CH 600V 25A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 5160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT10086SVRGMicrosemi-PPGMOSFET N-CH 1000V 13A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 860 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT12060LVFRGMicrosemi-PPGMOSFET N-CH 1200V 20A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 600 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 650nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 9500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6015B2VFRGMicrosemi-PPGMOSFET N-CH 600V 38A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT8065BVFRGMicrosemi-PPGMOSFET N-CH 800V 13A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 3700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT14050JVFRMicrosemi-PPGMOSFET N-CH 1400V 23A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1400V (1.4kV)  ·  Gate Charge (Qg) @ Vgs: 820nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 13500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT5010LVRGMicrosemi-PPGMOSFET N-CH 500V 47A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 470nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 8900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT50M80LVFRGMicrosemi-PPGMOSFET N-CH 500V 58A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 423nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 8797pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT4014SVFRGMicrosemi-PPGMOSFET N-CH 400V 28A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 3600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT5024SVRGMicrosemi-PPGMOSFET N-CH 500V 22A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 221nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 4320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT10M09B2VFRGMicrosemi-PPGMOSFET N-CH 100V 100A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 350nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9875pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT12080LVFRGMicrosemi-PPGMOSFET N-CH 1200V 16A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 485nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 7800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6011B2VRGMicrosemi-PPGMOSFET N-CH 600V 49A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 24.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 450nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 8900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT60M80JVRMicrosemi-PPGMOSFET N-CH 600V 55A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 870nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 14500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 568W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT30M40B2VFRGMicrosemi-PPGMOSFET N-CH 300V 76A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 76A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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