Производитель: Vishay/Siliconix  •  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 18nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 320mA  •  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 1W  •  Mounting Type: Through Hole  •  Package / Case: 4-DIP, HVMDIP  •  Встречается под наим.: *IRFDC20