Характеристики | Производитель: Fairchild Semiconductor • Вредные вещества: RoHS Без свинца • Обратите внимание: Lead Dimension Change 23 jan 2007 • Серия: QFET™ • Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V • Drain to Source Voltage (Vdss): 100V • Gate Charge (Qg) @ Vgs: 6nC @ 5V • Current - Continuous Drain (Id) @ 25° C: 5.8A • Input Capacitance (Ciss) @ Vds: 290pF @ 25V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 2.5W • Mounting Type: Through Hole • Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) |