Производитель: Toshiba  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V  •  Drain to Source Voltage (Vdss): 800V  •  Gate Charge (Qg) @ Vgs: 68nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 8A  •  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 85W  •  Mounting Type: Through Hole  •  Package / Case: 2-16F1B