Производитель: International Rectifier  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V  •  Drain to Source Voltage (Vdss): 75V  •  Gate Charge (Qg) @ Vgs: 130nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 97A  •  Input Capacitance (Ciss) @ Vds: 3540pF @ 50V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 190W  •  Mounting Type: Through Hole  •  Package / Case: TO-220-3 (Straight Leads)  •  Встречается под наим.: *IRFB3507