Производитель: ON Semiconductor  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Current - Continuous Drain (Id) @ 25° C: 250mA  •  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 350mW  •  Mounting Type: Through Hole  •  Package / Case: TO-92-3 (Standard Body), TO-226  •  Встречается под наим.: BS107ARL1G-ND, BS107ARL1GOSCT