Дискретные полупроводники · MOSFET транзисторы (одиночные)

SPW52N50C3 — MOSFET N-CH 560V 52A TO-247

Производитель	Infineon Technologies
Вредные вещества	RoHS Без свинца

Серия	CoolMOS™
Rds On (Max) @ Id, Vgs	70 mOhm @ 30A, 10V
Drain to Source Voltage (Vdss)	560V
Gate Charge (Qg) @ Vgs	290nC @ 10V
Current - Continuous Drain (Id) @ 25° C	52A
Input Capacitance (Ciss) @ Vds	6800pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	417W
Mounting Type	Through Hole
Package / Case	TO-247
Встречается под наим.	SP000014626, SPW52N50C3-ND, SPW52N50C3IN, SPW52N50C3X, SPW52N50C3XK

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IPW50R350CP	Infineon Technologies	MOSFET N-CH 550V 10A TO247-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1020pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 89W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	SPD07N60C3T	Infineon Technologies	MOSFET N-CH 650V 7.3A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	SPP24N60C3	Infineon Technologies	MOSFET N-CH 650V 24.3A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 15.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24.3A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 240W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPW24N60C3	Infineon Technologies	MOSFET N-CH 650V 24.3A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 15.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24.3A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 240W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPB02N60S5	Infineon Technologies	MOSFET N-CH 600V 1.8A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 9.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPN03N60C3	Infineon Technologies	MOSFET N-CH 650V 0.7A SOT-223 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 700mA · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00	Доп. информация Искать в поставщиках
	SPN03N60S5	Infineon Technologies	MOSFET N-CH 600V 0.7A SOT-223 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 12.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 700mA · Input Capacitance (Ciss) @ Vds: 440pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Доп. информация Искать в поставщиках
	IPP50R520CP	Infineon Technologies	MOSFET N-CH 550V 7.1A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.1A · Input Capacitance (Ciss) @ Vds: 680pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPA06N80C3	Infineon Technologies	MOSFET N-CH 800V 6A TO220FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 785pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 39W · Mounting Type: Through Hole · Package / Case: TO-220F	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPP04N50C3	Infineon Technologies	MOSFET N-CH 560V 4.5A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 470pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPP07N60CFD	Infineon Technologies	MOSFET N-CH 650V 6.6A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 47nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.6A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	IPW90R1K2C3	Infineon Technologies	MOSFET N-CH 900V 5.1A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 710pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	SPN02N60S5	Infineon Technologies	MOSFET N-CH 600V 0.4A SOT-223 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 7.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 400mA · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Доп. информация Искать в поставщиках
	SPB04N60S5	Infineon Technologies	MOSFET N-CH 600V 4.5A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 22.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 580pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPS01N60C3	Infineon Technologies	MOSFET N-CH 650V 800MA TO251-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 800mA · Input Capacitance (Ciss) @ Vds: 100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 11W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPP15N60C3	Infineon Technologies	MOSFET N-CH 650V 15A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1660pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPP06N80C3	Infineon Technologies	MOSFET N-CH 800V 6A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 785pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPS04N60C3	Infineon Technologies	MOSFET N-CH 650V 4.5A TO251-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPD07N60S5T	Infineon Technologies	MOSFET N-CH 600V 7.3A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 970pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IPA90R800C3	Infineon Technologies	MOSFET N-CH 900V 6.9A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.9A · Input Capacitance (Ciss) @ Vds: 1100pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 33W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	IPW60R165CP	Infineon Technologies	MOSFET N-CH 650V 21A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2000pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 192W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	SPP20N60CFD	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 124nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20.7A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPD50R399CP	Infineon Technologies	MOSFET N-CH 550V 9A TO-252 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 890pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IPW90R1K0C3	Infineon Technologies	MOSFET N-CH 900V 5.7A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.7A · Input Capacitance (Ciss) @ Vds: 850pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 89W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	IPI90R1K2C3	Infineon Technologies	MOSFET N-CH 900V 5.1A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 710pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках

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