Дискретные полупроводники · MOSFET транзисторы (одиночные)

SPP04N80C3 — MOSFET N-CH 800V 4A TO-220AB

Производитель	Infineon Technologies
Вредные вещества	RoHS Без свинца

Серия	CoolMOS™
Rds On (Max) @ Id, Vgs	1.3 Ohm @ 2.5A, 10V
Drain to Source Voltage (Vdss)	800V
Gate Charge (Qg) @ Vgs	31nC @ 10V
Current - Continuous Drain (Id) @ 25° C	4A
Input Capacitance (Ciss) @ Vds	570pF @ 100V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	63W
Mounting Type	Through Hole
Package / Case	TO-220AB
Встречается под наим.	SP000013706, SPP04N80C3IN, SPP04N80C3X, SPP04N80C3XK, SPP04N80C3XTIN, SPP04N80C3XTIN-ND

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IPA50R250CP	Infineon Technologies	MOSFET N-CH 550V 13A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 1420pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 33W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	SPA03N60C3	Infineon Technologies	MOSFET N-CH 650V 3.2A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 29.7W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP60R520CP	Infineon Technologies	MOSFET N-CH 650V 6.8A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.8A · Input Capacitance (Ciss) @ Vds: 630pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPA15N60CFD	Infineon Technologies	MOSFET N-CH 650V 13.4A TO220-FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 330 mOhm @ 9.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 84nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13.4A · Input Capacitance (Ciss) @ Vds: 1820pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	SPA20N65C3	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 114nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20.7A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34.5W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPW50R199CP	Infineon Technologies	MOSFET N-CH 550V 17A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 1800pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 139W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	IPI90R340C3	Infineon Technologies	MOSFET N-CH 900V 15A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 94nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 2400pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPW47N60S5	Infineon Technologies	MOSFET N-CH 650V 47A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 286nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 7600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 415W · Mounting Type: Through Hole · Package / Case: TO-247		Доп. информация Искать в поставщиках
	IPI60R299CP	Infineon Technologies	MOSFET N-CH 650V 11A I2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1100pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 96W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPW07N60CFD	Infineon Technologies	MOSFET N-CH 650V 6.6A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 47nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.6A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	SPD04N60C3	Infineon Technologies	MOSFET N-CH 650V 4.5A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IPA60R299CP	Infineon Technologies	MOSFET N-CH 650V 11A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1100pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 33W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	IPA60R250CP	Infineon Technologies	MOSFET N-CH 650V 12A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1300pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 33W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	IPA60R165CP	Infineon Technologies	MOSFET N-CH 650V 21A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2000pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 34W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPW20N60CFD	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 124nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20.7A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPI15N65C3	Infineon Technologies	MOSFET N-CH 650V 15A TO262-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPP04N60S5	Infineon Technologies	MOSFET N-CH 600V 4.5A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 22.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 580pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPN04N60S5	Infineon Technologies	MOSFET N-CH 600V 0.8A SOT-223 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 800mA · Input Capacitance (Ciss) @ Vds: 600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Доп. информация Искать в поставщиках
	IPA60R600CP	Infineon Technologies	MOSFET N-CH 650V 6.1A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.1A · Input Capacitance (Ciss) @ Vds: 550pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 28W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	SPI08N80C3	Infineon Technologies	MOSFET N-CH 800V 8A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1100pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPU07N60S5	Infineon Technologies	MOSFET N-CH 600V 7.3A TO-251 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 970pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPA90R1K0C3	Infineon Technologies	MOSFET N-CH 900V 5.7A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.7A · Input Capacitance (Ciss) @ Vds: 850pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	SPA07N60CFD	Infineon Technologies	MOSFET N-CH 650V 6.6A TO220-FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 47nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.6A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	IPP90R800C3	Infineon Technologies	MOSFET N-CH 900V 6.9A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.9A · Input Capacitance (Ciss) @ Vds: 1100pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 104W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	IPA60R385CP	Infineon Technologies	MOSFET N-CH 650V 9A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 790pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 31W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках

Каталог с параметрами на 1.401.534 компонентов

Регистрация • Реклама на сайте