Дискретные полупроводники · MOSFET транзисторы (одиночные)

SPD02N60C3 — MOSFET N-CH 650V 1.8A DPAK

Производитель	Infineon Technologies

Серия	CoolMOS™
Rds On (Max) @ Id, Vgs	3 Ohm @ 1.1A, 10V
Drain to Source Voltage (Vdss)	650V
Gate Charge (Qg) @ Vgs	12.5nC @ 10V
Current - Continuous Drain (Id) @ 25° C	1.8A
Input Capacitance (Ciss) @ Vds	200pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	25W
Mounting Type	Surface Mount
Package / Case	DPak, TO-252 (2 leads+tab), SC-63
Встречается под наим.	SP000077610, SPD02N60C3INTR

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	SPB17N80C3	Infineon Technologies	MOSFET N-CH 800V 17A D2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 177nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 2300pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 227W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPA50R350CP	Infineon Technologies	MOSFET N-CH 550V 10A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1020pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	SPS01N60C3	Infineon Technologies	MOSFET N-CH 650V 800MA TO251-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 800mA · Input Capacitance (Ciss) @ Vds: 100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 11W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPW17N80C3	Infineon Technologies	MOSFET N-CH 800V 17A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 177nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 2320pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPB20N60S5	Infineon Technologies	MOSFET N-CH 600V 20A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 103nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPI90R500C3	Infineon Technologies	MOSFET N-CH 900V 11A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1700pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPD07N60C3T	Infineon Technologies	MOSFET N-CH 650V 7.3A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	SPW11N60S5	Infineon Technologies	MOSFET N-CH 600V 11A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1460pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPW11N80C3	Infineon Technologies	MOSFET N-CH 800V 11A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 85nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1600pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPP04N60C3	Infineon Technologies	MOSFET N-CH 650V 4.5A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP50R520CP	Infineon Technologies	MOSFET N-CH 550V 7.1A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.1A · Input Capacitance (Ciss) @ Vds: 680pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPW07N60CFD	Infineon Technologies	MOSFET N-CH 650V 6.6A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 47nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.6A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	SPD04N60C3	Infineon Technologies	MOSFET N-CH 650V 4.5A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	SPI20N65C3	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 114nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20.7A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPI90R1K2C3	Infineon Technologies	MOSFET N-CH 900V 5.1A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 710pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPB04N60C3	Infineon Technologies	MOSFET N-CH 650V 4.5A D2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPA06N80C3	Infineon Technologies	MOSFET N-CH 800V 6A TO220FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 785pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 39W · Mounting Type: Through Hole · Package / Case: TO-220F	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP60R125CP	Infineon Technologies	MOSFET N-CH 650V 25A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 2500pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPA04N60C3	Infineon Technologies	MOSFET N-CH 650V 4.5A TO220FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 31W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP90R500C3	Infineon Technologies	MOSFET N-CH 900V 11A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1700pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPW24N60C3	Infineon Technologies	MOSFET N-CH 650V 24.3A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 15.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24.3A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 240W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPS03N60C3	Infineon Technologies	MOSFET N-CH 650V 3.2A TO251-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPP02N60C3	Infineon Technologies	MOSFET N-CH 650V 1.8A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 12.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPW47N65C3	Infineon Technologies	MOSFET N-CH 650V 47A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 255nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 7000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 415W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	IPI60R385CP	Infineon Technologies	MOSFET N-CH 650V 9A I2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 790pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках

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