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SI3455ADV-T1-E3 — MOSFET P-CH 30V 2.7A 6-TSOP
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI4896DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 80V 6.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1065X-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 1.18A SOT563F Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.18A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 10.8nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.18A · Input Capacitance (Ciss) @ Vds: 480pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIB411DK-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 9A SC75-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 470pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 13W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-75-6L | Доп. информация Искать в поставщиках | |
 | SIE808DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 60A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 25A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 155nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 8800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (L) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7113DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 100V 13.2A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 134 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13.2A · Input Capacitance (Ciss) @ Vds: 1480pF @ 50V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SUM55P06-19L-E3 | Vishay/Siliconix | MOSFET P-CH 60V 55A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 115nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 3500pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4800BDY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM110N06-3M4L-E3 | Vishay/Siliconix | MOSFET N-CH 60V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 12900pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7100DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 8V 35A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 105nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 3810pF @ 4V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 | Доп. информация Искать в поставщиках |
 | SI3459DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 2.2A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4346DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 5.9A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.31W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7461DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 8.6A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 190nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.6A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | TP0202K-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 385MA SOT23-3 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 385mA · Input Capacitance (Ciss) @ Vds: 31pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIE820DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 50A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 143nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 4300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (S) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4401BDY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 40V 8.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.5A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 55nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4466DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 9.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4384DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 10A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.47W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7120DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 6.3A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.3A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4413ADY-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 10.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 95nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10.5A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM110N04-05H-E3 | Vishay/Siliconix | MOSFET N-CH 40V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 95nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 6700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7107DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 9.8A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SUM45N25-58-E3 | Vishay/Siliconix | MOSFET N-CH 250V 45A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 58 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 5000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI8405DB-T1-E1 | Vishay/Siliconix | MOSFET P-CH 12V 3.6A 2X2 4-MFP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 21nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.6A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.47W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7448DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 13.4A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13.4A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI5445BDC-T1-E3 | Vishay/Siliconix | MOSFET P-CH 8V 5.2A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 21nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.2A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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