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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
IRLML5203

IRLML5203 — MOSFET P-CH 30V 3A SOT-23

ПроизводительInternational Rectifier
СерияHEXFET®
Rds On (Max) @ Id, Vgs98 mOhm @ 3A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs14nC @ 10V
Current - Continuous Drain (Id) @ 25° C3A
Input Capacitance (Ciss) @ Vds510pF @ 25V
FET PolarityP-Channel
FET FeatureLogic Level Gate
Power - Max1.25W
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 90nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 2020pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.8W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262-3 (Straight Leads)
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Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 62A  ·  Input Capacitance (Ciss) @ Vds: 2417pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 87W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF3007SPBFIRF3007SPBFInternational RectifierMOSFET N-CH 75V 62A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 48A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 62A  ·  Input Capacitance (Ciss) @ Vds: 3270pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 120W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF7463TRPBFIRF7463TRPBFInternational RectifierMOSFET N-CH 30V 14A 8-SOIC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 51nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 3150pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRL3303STRLIRL3303STRLInternational RectifierMOSFET N-CH 30V 38A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFZ44EIRFZ44EInternational RectifierMOSFET N-CH 60V 48A TO-220AB
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 48A  ·  Input Capacitance (Ciss) @ Vds: 1360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF7700IRF7700International RectifierMOSFET P-CH 20V 8.6A 8-TSSOP
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.6A  ·  Input Capacitance (Ciss) @ Vds: 4300pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSSOP
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IRF7805ZGPBFInternational RectifierMOSFET N-CH 30V 16A 8-SOIC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 2080pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: SO-8
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IRFSL4710PBFIRFSL4710PBFInternational RectifierMOSFET N-CH 100V 75A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 45A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.8W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262-3 (Straight Leads)
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IRF8113TRIRF8113TRInternational RectifierMOSFET N-CH 30V 17.2A 8-SOIC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 17.2A  ·  Input Capacitance (Ciss) @ Vds: 2910pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFR2905ZPBFIRFR2905ZPBFInternational RectifierMOSFET N-CH 55V 42A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 1380pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SI4410DYTRPBFSI4410DYTRPBFInternational RectifierMOSFET N-CH 30V 10A 8-SOIC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1585pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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