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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
IRLU3714PBF | International Rectifier | MOSFET N-CH 20V 36A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 9.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 36A · Input Capacitance (Ciss) @ Vds: 670pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRLU8721PBF | International Rectifier | MOSFET N-CH 30V 65A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 1030pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRLB8721PBF | International Rectifier | MOSFET N-CH 30V 62A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 62A · Input Capacitance (Ciss) @ Vds: 1077pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRLU2905PBF | International Rectifier | MOSFET N-CH 55V 42A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 48nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF3706L | International Rectifier | MOSFET N-CH 20V 77A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 35nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 77A · Input Capacitance (Ciss) @ Vds: 2410pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
IRF3805L-7PPBF | International Rectifier | MOSFET N-CH 55V 160A TO-263-7 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 160A · Input Capacitance (Ciss) @ Vds: 7820pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-263-7 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF3707 | International Rectifier | MOSFET N-CH 30V 62A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 19nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 62A · Input Capacitance (Ciss) @ Vds: 1990pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 87W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
IRFR4620TRLPBF | International Rectifier | MOSFET N-CH 200V 24A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 1710pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 144W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFB3507 | International Rectifier | MOSFET N-CH 75V 97A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 97A · Input Capacitance (Ciss) @ Vds: 3540pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
IRF7205 | International Rectifier | MOSFET P-CH 30V 4.6A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.6A · Input Capacitance (Ciss) @ Vds: 870pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRL3705NSTRRPBF | International Rectifier | MOSFET N-CH 55V 89A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 98nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 89A · Input Capacitance (Ciss) @ Vds: 3600pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFIZ24NPBF | International Rectifier | MOSFET N-CH 55V 14A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 70 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 29W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF7811 | International Rectifier | MOSFET N-CH 28V 14A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 28V · Gate Charge (Qg) @ Vgs: 23nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1800pF @ 16V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
IRLML2502TR | International Rectifier | MOSFET N-CH 20V 4.2A SOT-23 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 12nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 4.2A · Input Capacitance (Ciss) @ Vds: 740pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFS17N20DPBF | International Rectifier | MOSFET N-CH 200V 16A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF2804S | International Rectifier | MOSFET N-CH 40V 75A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 6450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 330W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRLR3410TRL | International Rectifier | MOSFET N-CH 100V 17A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 34nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 79W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRL3715TRL | International Rectifier | MOSFET N-CH 20V 54A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 54A · Input Capacitance (Ciss) @ Vds: 1060pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
IRLU3105PBF | International Rectifier | MOSFET N-CH 55V 25A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 37 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 710pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 57W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFSL23N15DPBF | International Rectifier | MOSFET N-CH 150V 23A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF7831TRPBF | International Rectifier | MOSFET N-CH 30V 21A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 6240pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFU2307ZPBF | International Rectifier | MOSFET N-CH 75V 42A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 75nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2190pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRL2910STRR | International Rectifier | MOSFET N-CH 100V 55A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 140nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 3700pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFU3704 | International Rectifier | MOSFET N-CH 20V 75A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 19nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 1996pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
IRFU2905Z | International Rectifier | MOSFET N-CH 55V 42A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках |
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