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IRFBE30STRR — MOSFET N-CH 800V 4.1A D2PAK
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | IRF9510S | Vishay/Siliconix | MOSFET P-CH 100V 4A D2PAK Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4A · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF9Z14STRL | Vishay/Siliconix | MOSFET P-CH 60V 6.7A D2PAK Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 270pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFP054PBF | Vishay/Siliconix | MOSFET N-CH 60V 70A TO-247AC Rds On (Max) @ Id, Vgs: 14 mOhm @ 54A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 230W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7459DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 13A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFR110TRRPBF | Vishay/Siliconix | MOSFET N-CH 100V 4.3A DPAK Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 180pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFU014 | Vishay/Siliconix | MOSFET N-CH 60V 7.7A I-PAK Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.7A · Input Capacitance (Ciss) @ Vds: 300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRFIB6N60APBF | Vishay/Siliconix | MOSFET N-CH 600V 5.5A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFR9110TR | Vishay/Siliconix | MOSFET P-CH 100V 3.1A DPAK Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF9Z14LPBF | Vishay/Siliconix | MOSFET P-CH 60V 6.7A TO-262 Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 270pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFI710G | Vishay/Siliconix | MOSFET N-CH 400V 1.6A TO220FP Серия: HEXFET® · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 1.6A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
 | IRC830 | Vishay/Siliconix | MOSFET N-CH 500V 4.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 610pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF9Z34STRLPBF | Vishay/Siliconix | MOSFET P-CH 60V 18A D2PAK Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI3475DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 200V 950MA 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.61 Ohm @ 900mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 950mA · Input Capacitance (Ciss) @ Vds: 500pF @ 50V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 3.2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFP460A | Vishay/Siliconix | MOSFET N-CH 500V 20A TO-247AC Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках |
 | SI4164DY-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 30V 30A 8-SOIC Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 95nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 3545pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFR110 | Vishay/Siliconix | MOSFET N-CH 100V 4.3A DPAK Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 180pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFZ24STRL | Vishay/Siliconix | MOSFET N-CH 60V 17A D2PAK Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFPC30 | Vishay/Siliconix | MOSFET N-CH 600V 4.3A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 630pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | Доп. информация Искать в поставщиках | |
 | SI4466DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 9.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFRC20TRLPBF | Vishay/Siliconix | MOSFET N-CH 600V 2A DPAK Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| SI1303EDL-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 670MA SOT323-3 Rds On (Max) @ Id, Vgs: 430 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 670mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 290mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | Доп. информация Искать в поставщиках | ||
 | SI4346DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 5.9A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.31W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF730STRL | Vishay/Siliconix | MOSFET N-CH 400V 5.5A D2PAK Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFI634G | Vishay/Siliconix | MOSFET N-CH 250V 5.6A TO220FP Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · Input Capacitance (Ciss) @ Vds: 770pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
 | IRC730PBF | Vishay/Siliconix | MOSFET N-CH 400V 5.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | Доп. информация Искать в поставщиках |
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