Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRF3704ZPBF — MOSFET N-CH 20V 67A TO-220AB

Производитель	International Rectifier
Вредные вещества	RoHS Без свинца

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	7.9 mOhm @ 21A, 10V
Drain to Source Voltage (Vdss)	20V
Gate Charge (Qg) @ Vgs	13nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C	67A
Input Capacitance (Ciss) @ Vds	1220pF @ 10V
FET Polarity	N-Channel
FET Feature	Logic Level Gate
Power - Max	57W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Встречается под наим.	*IRF3704ZPBF

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRFR2407TRRPBF	International Rectifier	MOSFET N-CH 75V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF7700	International Rectifier	MOSFET P-CH 20V 8.6A 8-TSSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 89nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.6A · Input Capacitance (Ciss) @ Vds: 4300pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP		Доп. информация Искать в поставщиках
	IRF7805ZGPBF	International Rectifier	MOSFET N-CH 30V 16A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 2080pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SO-8	от 0,00	Доп. информация Искать в поставщиках
	IRL3714LPBF	International Rectifier	MOSFET N-CH 20V 36A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 9.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 36A · Input Capacitance (Ciss) @ Vds: 670pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFSL4710PBF	International Rectifier	MOSFET N-CH 100V 75A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 45A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 6160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFSL33N15D	International Rectifier	MOSFET N-CH 150V 33A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 90nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 2020pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRF8113TR	International Rectifier	MOSFET N-CH 30V 17.2A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 36nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 17.2A · Input Capacitance (Ciss) @ Vds: 2910pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRFR2905ZPBF	International Rectifier	MOSFET N-CH 55V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF3708S	International Rectifier	MOSFET N-CH 30V 62A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 24nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 62A · Input Capacitance (Ciss) @ Vds: 2417pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 87W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	SI4410DYTRPBF	International Rectifier	MOSFET N-CH 30V 10A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1585pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLR3802TRPBF	International Rectifier	MOSFET N-CH 12V 84A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 41nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 2490pF @ 6V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRLU120N	International Rectifier	MOSFET N-CH 100V 10A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 185 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 440pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 48W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFR3704TRR	International Rectifier	MOSFET N-CH 20V 75A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 19nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 1996pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 62W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IRFB4410	International Rectifier	MOSFET N-CH 100V 96A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 96A · Input Capacitance (Ciss) @ Vds: 5150pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFZ44NSTRRPBF	International Rectifier	MOSFET N-CH 55V 49A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 49A · Input Capacitance (Ciss) @ Vds: 1470pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRLR3714ZTRPBF	International Rectifier	MOSFET N-CH 20V 37A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.1nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 37A · Input Capacitance (Ciss) @ Vds: 560pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRLR8103V	International Rectifier	MOSFET N-CH 30V 91A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 91A · Input Capacitance (Ciss) @ Vds: 2672pF @ 16V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 115W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLL2705TRPBF	International Rectifier	MOSFET N-CH 55V 3.8A SOT223 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.8A · Input Capacitance (Ciss) @ Vds: 870pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF1407STRL	International Rectifier	MOSFET N-CH 75V 100A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 78A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 250nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 5600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF7805PBF	International Rectifier	MOSFET N-CH 30V 13A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 31nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 13A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRL3202STRL	International Rectifier	MOSFET N-CH 20V 48A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 29A, 7V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 43nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 48A · Input Capacitance (Ciss) @ Vds: 2000pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 69W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFP150NPBF	International Rectifier	MOSFET N-CH 100V 42A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 36 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFS33N15D	International Rectifier	MOSFET N-CH 150V 33A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 90nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 2020pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRLZ34NSTRR	International Rectifier	MOSFET N-CH 55V 30A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 25nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 880pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF7410TR	International Rectifier	MOSFET P-CH 12V 16A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 91nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 8676pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках

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