Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRF1010ZPBF — MOSFET N-CH 55V 75A TO-220AB

Производитель	International Rectifier
Вредные вещества	RoHS Без свинца

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 75A, 10V
Drain to Source Voltage (Vdss)	55V
Gate Charge (Qg) @ Vgs	95nC @ 10V
Current - Continuous Drain (Id) @ 25° C	75A
Input Capacitance (Ciss) @ Vds	2840pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	140W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Встречается под наим.	*IRF1010ZPBF

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRL1404ZLPBF	International Rectifier	MOSFET N-CH 40V 75A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 110nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5080pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-262	от 0,00	Доп. информация Искать в поставщиках
	IRFS4310	International Rectifier	MOSFET N-CH 100V 140A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 250nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 140A · Input Capacitance (Ciss) @ Vds: 7670pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 330W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFP4229PBF	International Rectifier	MOSFET N-CH 250V 44A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 46 mOhm @ 26A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 44A · Input Capacitance (Ciss) @ Vds: 4560pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 310W · Mounting Type: Through Hole · Package / Case: TO-247AC	от 0,00	Доп. информация Искать в поставщиках
	IRF1405	International Rectifier	MOSFET N-CH 55V 169A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 169A · Input Capacitance (Ciss) @ Vds: 5480pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 330W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRF3710ZSTRRPBF	International Rectifier	MOSFET N-CH 100V 59A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 59A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRLML6402TR	International Rectifier	MOSFET P-CH 20V 3.7A SOT-23 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 12nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 3.7A · Input Capacitance (Ciss) @ Vds: 633pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	от 0,00	Доп. информация Искать в поставщиках
	IRLU3715ZPBF	International Rectifier	MOSFET N-CH 20V 49A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 49A · Input Capacitance (Ciss) @ Vds: 810pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFZ24NSPBF	International Rectifier	MOSFET N-CH 55V 17A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRLR2905TRPBF	International Rectifier	MOSFET N-CH 55V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 48nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF3710ZSTRLPBF	International Rectifier	MOSFET N-CH 100V 59A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 59A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFSL3806PBF	International Rectifier	MOSFET N-CH 60V 43A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 1150pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 71W · Mounting Type: Through Hole · Package / Case: TO-262	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF6609	International Rectifier	MOSFET N-CH 20V 31A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 69nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 6290pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric MT	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFP90N20DPBF	International Rectifier	MOSFET N-CH 200V 94A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 56A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 270nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 94A · Input Capacitance (Ciss) @ Vds: 6040pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 580W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF3711S	International Rectifier	MOSFET N-CH 20V 110A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRL1104L	International Rectifier	MOSFET N-CH 40V 104A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 68nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 104A · Input Capacitance (Ciss) @ Vds: 3445pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.4W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRF6722STR1PBF	International Rectifier	MOSFET N-CH 30V 13A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 1320pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.2W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric ST	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFS38N20DTRLP	International Rectifier	MOSFET N-CH 200V 43A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 54 mOhm @ 26A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 91nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF1010NS	International Rectifier	MOSFET N-CH 55V 85A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 85A · Input Capacitance (Ciss) @ Vds: 3210pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 180W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRFSL3004PBF	International Rectifier	MOSFET N-CH 40V 195A TO262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 195A · Input Capacitance (Ciss) @ Vds: 9200pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 380W · Mounting Type: Through Hole · Package / Case: TO-262	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLML2402TR	International Rectifier	MOSFET N-CH 20V 1.2A SOT-23 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 250 mOhm @ 930mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 3.9nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.2A · Input Capacitance (Ciss) @ Vds: 110pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 540mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	от 0,00	Доп. информация Искать в поставщиках
	IRFL4105PBF	International Rectifier	MOSFET N-CH 55V 3.7A SOT223 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.7A · Input Capacitance (Ciss) @ Vds: 660pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00	Доп. информация Искать в поставщиках
	IRFS4610PBF	International Rectifier	MOSFET N-CH 100V 73A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 73A · Input Capacitance (Ciss) @ Vds: 3550pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF6727MTR1PBF	International Rectifier	MOSFET N-CH 30V 32A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 74nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 32A · Input Capacitance (Ciss) @ Vds: 6190pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.8W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric MX	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7853PBF	International Rectifier	MOSFET N-CH 100V 8.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.3A · Input Capacitance (Ciss) @ Vds: 1640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRFR13N15DTRPBF	International Rectifier	MOSFET N-CH 150V 14A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 86W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках

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