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IPP50R299CP — MOSFET N-CH 550V 12A TO220-3
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SPA11N65C3 | Infineon Technologies | MOSFET N-CH 650V 11A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 33W · Mounting Type: Through Hole · Package / Case: TO-220FP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SPB20N60S5 | Infineon Technologies | MOSFET N-CH 600V 20A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 103nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPI60R165CP | Infineon Technologies | MOSFET N-CH 650V 21A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2000pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 192W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | SPW47N60C2 | Infineon Technologies | MOSFET N-CH 600V 47A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 286nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 8800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 415W · Mounting Type: Through Hole · Package / Case: TO-247 | Доп. информация Искать в поставщиках | |
 | SPB07N60S5 | Infineon Technologies | MOSFET N-CH 600V 7.3A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 970pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SPI11N60S5 | Infineon Technologies | MOSFET N-CH 600V 11A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1460pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SPP15N65C3 | Infineon Technologies | MOSFET N-CH 650V 15A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
 | SPA07N65C3 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках |
 | SPP03N60S5 | Infineon Technologies | MOSFET N-CH 600V 3.2A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPB60R250CP | Infineon Technologies | MOSFET N-CH 650V 12A TO263-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1200pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | SPA17N80C3 | Infineon Technologies | MOSFET N-CH 800V 17A TO220FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 177nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 2320pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Through Hole · Package / Case: TO-220F | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SPU03N60S5 | Infineon Technologies | MOSFET N-CH 600V 3.2A TO-251 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPA50R199CP | Infineon Technologies | MOSFET N-CH 550V 17A TO220-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 1800pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 139W · Mounting Type: Through Hole · Package / Case: TO-220FP | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP50R399CP | Infineon Technologies | MOSFET N-CH 560V 9A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 890pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPA11N60C3 | Infineon Technologies | MOSFET N-CH 650V 11A TO220FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 33W · Mounting Type: Through Hole · Package / Case: TO-220FP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPB60R199CP | Infineon Technologies | MOSFET N-CH 650V 16A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1520pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 139W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| SPP21N50C3 | Infineon Technologies | MOSFET N-CH 560V 21A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 95nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SPD04N50C3T | Infineon Technologies | MOSFET N-CH 560V 4.5A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 470pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
| IPB60R099CPA | Infineon Technologies | MOSFET N-CH 600V 31A TO263-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 2800pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 255W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | SPB21N50C3 | Infineon Technologies | MOSFET N-CH 560V 21A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 95nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SPI15N60CFD | Infineon Technologies | MOSFET N-CH 650V 13.4A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 330 mOhm @ 9.4A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 84nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13.4A · Input Capacitance (Ciss) @ Vds: 1820pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPB50R299CP | Infineon Technologies | MOSFET N-CH 550V 12A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1190pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| SPP07N60S5 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 970pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPI60R099CP | Infineon Technologies | MOSFET N-CH 650V 31A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 2800pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 255W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| SPU01N60C3 | Infineon Technologies | MOSFET N-CH 650V 0.8A TO-251 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 800mA · Input Capacitance (Ciss) @ Vds: 100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 11W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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