Дискретные полупроводники · MOSFET транзисторы (одиночные)

IPB60R299CP — MOSFET N-CH 650V 11A TO-263

Производитель	Infineon Technologies
Вредные вещества	RoHS Без свинца

Серия	CoolMOS™
Rds On (Max) @ Id, Vgs	299 mOhm @ 6.6A, 10V
Drain to Source Voltage (Vdss)	650V
Gate Charge (Qg) @ Vgs	29nC @ 10V
Current - Continuous Drain (Id) @ 25° C	11A
Input Capacitance (Ciss) @ Vds	1100pF @ 100V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	96W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Встречается под наим.	SP000301161

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	SPN02N60C3	Infineon Technologies	MOSFET N-CH 650V 0.4A SOT-223 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 400mA · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00	Доп. информация Искать в поставщиках
	IPB50R140CP	Infineon Technologies	MOSFET N-CH 550V 23A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 64nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 2540pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 192W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPU04N60S5	Infineon Technologies	MOSFET N-CH 600V 4.5A TO-251 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 22.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 580pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPI07N60C3	Infineon Technologies	MOSFET N-CH 650V 7.3A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPP06N80C2	Infineon Technologies	MOSFET N-CH 800V 6A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 785pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220AB		Доп. информация Искать в поставщиках
	IPB50R199CP	Infineon Technologies	MOSFET N-CH 550V 17A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 1800pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 139W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IPB60R125CP	Infineon Technologies	MOSFET N-CH 650V 25A TO-263 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 2500pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IPB60R099CP	Infineon Technologies	MOSFET N-CH 650V 31A D2PAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 2800pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 255W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPW11N60CFD	Infineon Technologies	MOSFET N-CH 650V 11A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 64nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP90R500C3	Infineon Technologies	MOSFET N-CH 900V 11A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1700pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	IPW90R340C3	Infineon Technologies	MOSFET N-CH 900V 15A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 94nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 2400pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	IPW50R140CP	Infineon Technologies	MOSFET N-CH 550V 23A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 64nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 2540pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 192W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00	Доп. информация Искать в поставщиках
	SPA04N60C3	Infineon Technologies	MOSFET N-CH 650V 4.5A TO220FP Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 31W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPP06N60C3	Infineon Technologies	MOSFET N-CH 650V 6.2A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.9A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.2A · Input Capacitance (Ciss) @ Vds: 620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPI60R125CP	Infineon Technologies	MOSFET N-CH 650V 25A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 2500pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPP02N60S5	Infineon Technologies	MOSFET N-CH 600V 1.8A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 9.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 240pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: TO-220		Доп. информация Искать в поставщиках
	SPS03N60C3	Infineon Technologies	MOSFET N-CH 650V 3.2A TO251-3 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IPD90R1K2C3	Infineon Technologies	MOSFET N-CH 900V 5.1A TO-252 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.1A · Input Capacitance (Ciss) @ Vds: 710pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	SPP16N50C3	Infineon Technologies	MOSFET N-CH 560V 16A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 560V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPW11N60S5	Infineon Technologies	MOSFET N-CH 600V 11A TO-247 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1460pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-247	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPU04N60C3	Infineon Technologies	MOSFET N-CH 650V 4.5A TO-251 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPI90R500C3	Infineon Technologies	MOSFET N-CH 900V 11A TO-262 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1700pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 156W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPD07N60S5	Infineon Technologies	MOSFET N-CH 600V 7.3A DPAK Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.3A · Input Capacitance (Ciss) @ Vds: 970pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	SPP11N60C3	Infineon Technologies	MOSFET N-CH 650V 11A TO-220AB Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP90R1K0C3	Infineon Technologies	MOSFET N-CH 900V 5.7A TO-220 Серия: CoolMOS™ · Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.7A · Input Capacitance (Ciss) @ Vds: 850pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 89W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках

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