Войти    Регистрация
ChipFind каталог подбора компонентов
Например: transistor, max232, lt319a
 

Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT30M19JVFR — MOSFET N-CH 300V 130A SOT-227

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
СерияPOWER MOS V®
Rds On (Max) @ Id, Vgs19 mOhm @ 500mA, 10V
Drain to Source Voltage (Vdss)300V
Gate Charge (Qg) @ Vgs975nC @ 10V
Current - Continuous Drain (Id) @ 25° C130A
Input Capacitance (Ciss) @ Vds21600pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max700W
Mounting TypeChassis Mount
Package / CaseSOT-227
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT50M60JVRMicrosemi-PPGMOSFET N-CH 500V 63A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 31.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 560nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 63A  ·  Input Capacitance (Ciss) @ Vds: 10600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 568W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
от 0,00Доп. информация
Искать в поставщиках
APT50M80B2VRGMicrosemi-PPGMOSFET N-CH 500V 58A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 423nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 8797pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
от 0,00Доп. информация
Искать в поставщиках
APT10M25BVFRGMicrosemi-PPGMOSFET N-CH 100V 75A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
от 0,00Доп. информация
Искать в поставщиках
APT8065BVRGMicrosemi-PPGMOSFET N-CH 800V 13A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 3700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
от 0,00Доп. информация
Искать в поставщиках
APT10M25SVRGMicrosemi-PPGMOSFET N-CH 100V 75A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
от 0,00Доп. информация
Искать в поставщиках
APT20M45SVRGMicrosemi-PPGMOSFET N-CH 200V 56A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 56A  ·  Input Capacitance (Ciss) @ Vds: 4860pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
от 0,00Доп. информация
Искать в поставщиках
APT8018L2VRGMicrosemi-PPGMOSFET N-CH 800V 43A TO-264MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 21.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 610nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 43A  ·  Input Capacitance (Ciss) @ Vds: 10700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
от 0,00Доп. информация
Искать в поставщиках
APT5024BVRGMicrosemi-PPGMOSFET N-CH 500V 22A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 221nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 4320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
от 0,00Доп. информация
Искать в поставщиках
APT6030BVRGMicrosemi-PPGMOSFET N-CH 600V 21A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 3750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 298W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
от 0,00Доп. информация
Искать в поставщиках
APT30M85BVRGMicrosemi-PPGMOSFET N-CH 300V 40A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 4950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
от 0,00Доп. информация
Искать в поставщиках
APT10030L2VRGMicrosemi-PPGMOSFET N-CH 1000V 33A TO-264MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 585nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 10600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
от 0,00Доп. информация
Искать в поставщиках
APT10050LVFRGMicrosemi-PPGMOSFET N-CH 1000V 21A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
от 0,00Доп. информация
Искать в поставщиках
APT10030L2VFRGMicrosemi-PPGMOSFET N-CH 1000V 33A TO-264MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 585nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 10600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
от 0,00Доп. информация
Искать в поставщиках
APT1001RSVRGMicrosemi-PPGMOSFET N-CH 1000V 11A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 280W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
от 0,00Доп. информация
Искать в поставщиках
APT5028BVRGMicrosemi-PPGMOSFET N-CH 500V 20A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 175nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 3180pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
от 0,00Доп. информация
Искать в поставщиках
APT5020BVRGMicrosemi-PPGMOSFET N-CH 500V 26A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
от 0,00Доп. информация
Искать в поставщиках
APT20M45BVRGMicrosemi-PPGMOSFET N-CH 200V 56A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 56A  ·  Input Capacitance (Ciss) @ Vds: 4860pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
от 0,00Доп. информация
Искать в поставщиках
APT1201R6SVFRGMicrosemi-PPGMOSFET N-CH 1200V 8A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 230nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
от 0,00Доп. информация
Искать в поставщиках
APT10M11JVFRMicrosemi-PPGMOSFET N-CH 100V 144A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 450nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 144A  ·  Input Capacitance (Ciss) @ Vds: 10380pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
от 0,00Доп. информация
Искать в поставщиках
APT20M18LVRGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 330nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9880pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
от 0,00Доп. информация
Искать в поставщиках
APT5017SVFRGMicrosemi-PPGMOSFET N-CH 500V 30A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 5280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
от 0,00Доп. информация
Искать в поставщиках
APT8030LVRGMicrosemi-PPGMOSFET N-CH 800V 27A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 510nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
от 0,00Доп. информация
Искать в поставщиках
APT30M40B2VRGMicrosemi-PPGMOSFET N-CH 300V 76A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 76A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
от 0,00Доп. информация
Искать в поставщиках
APT50M80B2VFRGMicrosemi-PPGMOSFET N-CH 500V 58A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 423nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 8797pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
от 0,00Доп. информация
Искать в поставщиках
APT20M22JVFRMicrosemi-PPGMOSFET N-CH 200V 97A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 97A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
от 0,00Доп. информация
Искать в поставщиках

Поискать «APT30M19JVFR» в:  Google   Яндекс   eFind   eInfo Сообщить об ошибке  


© 2006 — 2024 Капитал Плюс
Телефон, e-mail, ICQ для связи
Каталог с параметрами на 1.401.534 компонентов РегистрацияРеклама на сайте