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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT10M09LVFRG — MOSFET N-CH 100V 100A TO-264

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
СерияPOWER MOS V®
Rds On (Max) @ Id, Vgs9 mOhm @ 50A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs350nC @ 10V
Current - Continuous Drain (Id) @ 25° C100A
Input Capacitance (Ciss) @ Vds9875pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max625W
Mounting TypeThrough Hole
Package / CaseTO-264
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT6040BVFRGMicrosemi-PPGMOSFET N-CH 600V 16A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 3120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M38BVFRGMicrosemi-PPGMOSFET N-CH 200V 67A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 6120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT30M19JVRMicrosemi-PPGMOSFET N-CH 300V 130A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 975nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 130A  ·  Input Capacitance (Ciss) @ Vds: 21600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT50M50JVRMicrosemi-PPGMOSFET N-CH 500V 77A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 1000nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 77A  ·  Input Capacitance (Ciss) @ Vds: 19600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10040B2VFRGMicrosemi-PPGMOSFET N-CH 1000V 25A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 630nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT60M80L2VFRGMicrosemi-PPGMOSFET N-CH 600V 65A TO-264MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 590nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 13300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6015JVRMicrosemi-PPGMOSFET N-CH 600V 35A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT1001RSVFRGMicrosemi-PPGMOSFET N-CH 1000V 11A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 3050pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 278W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT5017BVFRGMicrosemi-PPGMOSFET N-CH 500V 30A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 5280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT6013JVRMicrosemi-PPGMOSFET N-CH 600V 40A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 540nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 10560pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT50M85JVFRMicrosemi-PPGMOSFET N-CH 500V 50A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 535nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 10800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M19JVRMicrosemi-PPGMOSFET N-CH 200V 112A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 495nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 112A  ·  Input Capacitance (Ciss) @ Vds: 11640pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M22JVRMicrosemi-PPGMOSFET N-CH 200V 97A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 97A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10050LVRGMicrosemi-PPGMOSFET N-CH 1000V 21A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10086BVFRGMicrosemi-PPGMOSFET N-CH 1000V 13A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 860 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT60M75JVRMicrosemi-PPGMOSFET N-CH 600V 62A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 1050nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 62A  ·  Input Capacitance (Ciss) @ Vds: 19800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10040LVFRGMicrosemi-PPGMOSFET N-CH 1000V 25A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 630nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6015JVFRMicrosemi-PPGMOSFET N-CH 600V 35A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6015LVRGMicrosemi-PPGMOSFET N-CH 600V 38A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT30M40JVRMicrosemi-PPGMOSFET N-CH 300V 70A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M45BVFRGMicrosemi-PPGMOSFET N-CH 200V 56A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 56A  ·  Input Capacitance (Ciss) @ Vds: 4860pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8015JVRMicrosemi-PPGMOSFET N-CH 800V 44A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 285nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 17650pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT4014BVFRGMicrosemi-PPGMOSFET N-CH 400V 28A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 3600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT50M50JVFRMicrosemi-PPGMOSFET N-CH 500V 77A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 1000nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 77A  ·  Input Capacitance (Ciss) @ Vds: 19600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8024LVRGMicrosemi-PPGMOSFET N-CH 800V 33A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 7740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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