Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11.6A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC

Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2220pF @ 12.5V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63

Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.9A  ·  Input Capacitance (Ciss) @ Vds: 1030pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP

Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 60W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63

Rds On (Max) @ Id, Vgs: 45 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 14.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 20V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63

Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 17.9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.6A  ·  Input Capacitance (Ciss) @ Vds: 1810pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP

Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 5.06nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  Input Capacitance (Ciss) @ Vds: 409pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 625mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363

Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 6400pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC

Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.1A, 4.5V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 3.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.1A  ·  Input Capacitance (Ciss) @ Vds: 300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 85A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: SO-8

Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1220pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63

Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 46A  ·  Input Capacitance (Ciss) @ Vds: 1452pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 43W  ·  Mounting Type: Surface Mount  ·  Package / Case: SO-8