Производитель: Vishay/Siliconix  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 28nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 13A  •  Input Capacitance (Ciss) @ Vds: 930pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 3.7W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)  •  Встречается под наим.: *IRL530L