Производитель: NXP Semiconductors  •  Вредные вещества: RoHS   Без свинца  •  Серия: TrenchMOS™  •  Rds On (Max) @ Id, Vgs: 57 mOhm @ 17A, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 96nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 39A  •  Input Capacitance (Ciss) @ Vds: 3750pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 250W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)  •  Встречается под наим.: PSMN057-200B /T3, PSMN057-200B /T3-ND