Производитель: Toshiba • Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V • Drain to Source Voltage (Vdss): 250V • Gate Charge (Qg) @ Vgs: 132nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 30A • Input Capacitance (Ciss) @ Vds: 5400pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 90W • Mounting Type: Through Hole • Package / Case: 2-16F1B
Архив документации
2SK2995 - N Channel Mos Type (high Speed, High Current Switching, Chopper Regulator, Dc-dc Converter and Motor Drive Applications) • Полевые МОП транзисторы