Производитель: ON Semiconductor  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 7.7nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 4.9A  •  Input Capacitance (Ciss) @ Vds: 940pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 750mW  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)