Производитель: International Rectifier  •  Вредные вещества: RoHS   Без свинца  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 300nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 195A  •  Input Capacitance (Ciss) @ Vds: 8970pF @ 50V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 375W  •  Mounting Type: Through Hole  •  Package / Case: TO-262