| Компонент |
Тип |
Аналог |
Источник информации |
| AMD |
AM28F512-150EI |
 |
CAT28F512TI-15 |
Catalyst |
|
| Bulk Erase Flash Memory - Density: 512K |
| AMD |
AM28F512-200EI |
|
CAT28F512TI-15 |
Catalyst |
|
| Bulk Erase Flash Memory - Density: 512K |
| Samsung |
K6F1008S2M-TI15 |
|
IS62WV1288BLL-55TI |
ISSI |
|
| 1Mb (128K x 8) ~3v Asynchronous SRAM Industrial |
| Samsung |
K6F2016S3M-TI15 |
|
IS62WV12816BLL-55TI |
ISSI |
|
| 2Mb (128K x 16) ~3v Asynchronous SRAM Industrial |
| Samsung |
K6R1008C1C-TI15 |
|
IS61C1024AL-12TI |
ISSI |
|
| 1Mb (128K x 8) 5v Asynchronous SRAM |
| Samsung |
K6R1008V1C-TI15 |
|
IS63LV1024-12TI |
ISSI |
|
| 1Mb (128K x 8) 3.3v Asynchronous SRAM Industrial |
| Samsung |
K6R1016C1C-TI15 |
|
IS61C6416-15TI |
ISSI |
|
| 1Mb (64K x 16) 5v Asynchronous SRAM |
| Samsung |
K6R1016V1C-TI15 |
|
IS61LV6416-10TI |
ISSI |
|
| 1Mb (64K x 16) 3.3v Asynchronous SRAM |
| Samsung |
K6R4008V1C-TI15 |
|
IS61LV5128AL-10TI |
ISSI |
|
| 4Mb (512K x 8) 3.3v Asynchronous SRAM |
| Samsung |
K6R4016V1C-TI15 |
|
IS61LV25616AL-10TI |
ISSI |
|
| 4Mb (256K x 16) 3.3v Asynchronous SRAM |
| Samsung |
KM6161002CTI-15 |
|
IS61C6416-15TI |
ISSI |
|
| 1Mb (64K x 16) 5v Asynchronous SRAM |
| Samsung |
KM616FS1000TI-15 |
|
IS62WV6416BLL-55TI |
ISSI |
|
| 1Mb (64K x 16) 3.3v Asynchronous SRAM Industrial |
| Samsung |
KM616FS1010TI-15 |
|
IS62WV6416BLL-55BI |
ISSI |
|
| 1Mb (64K x 16) 3.3v Asynchronous SRAM Industrial |
| Samsung |
KM616FS2000TI-15 |
|
IS62WV12816BLL-55TI |
ISSI |
|
| 2Mb (128K x 16) ~3v Asynchronous SRAM Industrial |
| Samsung |
KM616V1002ATI-15 |
|
IS61LV6416-10TI |
ISSI |
|
| 1Mb (64K x 16) 3.3v Asynchronous SRAM |
| Samsung |
KM616V1002CTI-15 |
|
IS61LV6416-10TI |
ISSI |
|
| 1Mb (64K x 16) 3.3v Asynchronous SRAM |
| Samsung |
KM616V4002CTI-15 |
|
IS61LV25616AL-10TI |
ISSI |
|
| 4Mb (256K x 16) 3.3v Asynchronous SRAM |
| Samsung |
KM681502CLTI-15 |
|
IS61C1024AL-12TI |
ISSI |
|
| 1Mb (128K x 8) 5v Asynchronous SRAM |
| Samsung |
KM681502CTI-15 |
|
IS61C1024AL-12TI |
ISSI |
|
| 1Mb (128K x 8) 5v Asynchronous SRAM |
| Samsung |
KM68FS1000TI-15 |
|
IS62WV1288BLL-55TI |
ISSI |
|
| 1Mb (128K x 8) ~3v Asynchronous SRAM Industrial |
| Samsung |
KM68V1002ATI-15 |
|
IS63LV1024-12TI |
ISSI |
|
| 1Mb (128K x 8) 3.3v Asynchronous SRAM Industrial |
| Samsung |
KM68V1002CLTI-15 |
|
IS63LV1024-12TI |
ISSI |
|
| 1Mb (128K x 8) 3.3v Asynchronous SRAM Industrial |
| Samsung |
KM68V1002CTI-15 |
|
IS63LV1024-12TI |
ISSI |
|
| 1Mb (128K x 8) 3.3v Asynchronous SRAM Industrial |
| Samsung |
KM68V4002CTI-15 |
|
IS61LV5128AL-10TI |
ISSI |
|
| 4Mb (512K x 8) 3.3v Asynchronous SRAM |
| Mitsubishi |
M5M28F101VP-15I |
|
CAT28F010TI-15 |
Catalyst |
|
| Bulk Erase Flash Memory - Density: 1Mb |
| INTEL |
TE28F001BX-B150 |
|
CAT28F001TI-15B |
Catalyst |
|
| Boot Block Flash Memory - Density: 1Mb |
| INTEL |
TE28F001BX-T150 |
|
CAT28F001TI-15T |
Catalyst |
|
| Boot Block Flash Memory - Density: 1Mb |
| TI |
TMS28F512-15XXDDE |
 |
CAT28F512TI-15 |
Catalyst |
|
| XX = Endurance Variation (C5 = 100,000, C4 = 10,000) |
| TI |
TMS28F512-17XXDDE |
|
CAT28F512TI-15 |
Catalyst |
|
| XX = Endurance Variation (C5 = 100,000, C4 = 10,000) |
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