| Компонент |
Тип |
Аналог |
Источник информации |
| IXYS |
IXGH10N100AU1 |
 |
IRG4PH30KD |
IRF |
|
| IGBT Discretes and Co-Packs |
| IXYS |
IXGH10N100U1 |
|
IRG4PH30KD |
IRF |
|
| IGBT Discretes and Co-Packs |
| IXYS |
IXGH10N60 |
 |
IRG4PC50S |
IRF |
|
| IGBT Discretes and Co-Packs |
|
IRG4PC40S |
IRF |
|
| IGBT Discretes and Co-Packs |
| IXYS |
IXGH10N60A |
|
IRG4BC20F |
IRF |
|
| IGBT Discretes and Co-Packs |
| IXYS |
IXGH10N60AUI |
|
IRG4PH30KD |
IRF |
|
| IGBT Discretes and Co-Packs |
| IXYS |
IXSH10N120A |
|
IRG4PH30K |
IRF |
|
| IGBT Discretes and Co-Packs |
|
SGW15N120 |
Infineon |
|
| IXYS |
IXSH10N120AU1 |
|
IRG4PC30FD |
IRF |
|
| IGBT Discretes and Co-Packs |
|
SKW07N120 |
Infineon |
|
| IXYS |
IXSH10N60A |
|
IRG4PC50U |
IRF |
|
| IGBT Discretes and Co-Packs |
|
IRG4PSC71U |
IRF |
|
| IGBT Discretes and Co-Packs |
| IXYS |
IXTH10N100 |
|
IRFPG50 |
IRF |
|
| MOSFETs |
| IXYS |
IXTH10N60A |
 |
BFC48 |
SemeLAB |
|
| IXYS |
IXTH10N90 |
|
IRFP9N90A |
IRF |
|
| MOSFETs |
|
IRFPF50 |
IRF |
|
| MOSFETs |
| Samsung |
KM68257EJ-10 |
|
IS61C256AH-10J |
ISSI |
|
| 256Kb (32K x 8) 5v Asynchronous SRAM |
| Samsung |
KM68257ETG-10 |
|
IS61C256AH-10T |
ISSI |
|
| 256Kb (32K x 8) 5v Asynchronous SRAM |
| Samsung |
KM718V947H-10 |
|
IS61NF51218-10B |
ISSI |
|
| 8Mb (512K x 18) 3.3v Synchronous SRAM No-wait Flowthrough |
| Samsung |
KM718V949H-10 |
|
IS61NP51218-5B |
ISSI |
|
| 8Mb (512K x 18) 3.3v Synchronous SRAM No-wait Pipelined |
| Samsung |
KM718V987H-10 |
|
IS61SF51218D-8.5B |
ISSI |
|
| 8Mb (512K x 18) 3.3v Synchronous SRAM Flowthrough |
| Samsung |
KM718V990H-10 |
|
IS61SPD51218D-133B |
ISSI |
|
| 8Mb (512K x 18) 3.3v Synchronous SRAM Pipelined |
| Samsung |
KM732V789H-10 |
|
IS61SP12832-133B |
ISSI |
|
| 4Mb (128K x 36) 3.3v Synchronous SRAM Pipelined |
| Samsung |
KM736S949H-10 |
|
71T75602S100BG |
IDT |
|
| Samsung |
KM736V847H-10 |
|
IS61NF25636-10B |
ISSI |
|
| 8Mb (256K x 36) 3.3v Synchronous SRAM No-wait Flowthrough |
| Samsung |
KM736V849H-10 |
|
IS61NP25636-5B |
ISSI |
|
| 8Mb (256K x 36) 3.3v Synchronous SRAM No-wait Pipelined |
| Samsung |
KM736V887H-10 |
|
IS61SF25636D-8.5B |
ISSI |
|
| 8Mb (256K x 36) 3.3v Synchronous SRAM Flowthrough |
| Samsung |
KM736V890H-10 |
|
IS61SPD25636D-133B |
ISSI |
|
| 8Mb (256K x 36) 3.3v Synchronous SRAM Pipelined |
| Samsung |
KM7718V989H-10 |
|
IS61SPS51218D-133B |
ISSI |
|
| 8Mb (512K x 18) 3.3v Synchronous SRAM Pipelined |
| Samsung |
KM7736V889H-10 |
|
IS61SPS25636D-133B |
ISSI |
|
| 8Mb (256K x 36) 3.3v Synchronous SRAM Pipelined |
| Fairchild |
KSE44H10 |
|
D44H11 |
STMicroelectronics |
|
| Transistors, Power Bipolar - Low - Medium Voltage |
| Fairchild |
KSE45H10 |
|
D45H11 |
STMicroelectronics |
|
| Transistors, Power Bipolar - Low - Medium Voltage |
| Diodes |
MMBTH10 |
 |
KST10 |
Fairchild |
|
| Siemens |
LH1056 |
|
PVT412L |
IRF |
|
| Microelectronic Relays |
| Infineon |
LH1056 |
|
PS7341-1A |
NEC |
|
| Siemens |
LH1085 |
|
PVT412L |
IRF |
|
| Microelectronic Relays |
| Vishay |
LH1085 |
|
LCA110L |
Clare |
|
| Higher Sensitivity and Isolation, Lower On-Resistance |
| Vishay |
LH1085AAB1 |
|
PS7341L-1A-A |
NEC |
|
| 6pin DIP SMT, 1ch, Form A, High V, High Iso, SSR, Pb-Free |
| Infineon |
LH1085AAB1 |
|
PS7341CL-1A |
NEC |
|
| Current limit type (5 pin NO Contact DC) |
| Vishay |
LH1085AAB1-TR |
|
PS7341L-1A-E3-A |
NEC |
|
| 6pin DIP SMT, 1ch, Form A, High V, High Iso, SSR, Pb-Free |
| Vishay |
LH1085AT1 |
|
PS7341-1A-A |
NEC |
|
| 6pin DIP, 1ch, Form A, High V, High Iso, SSR, Pb-Free |
| Infineon |
LH1085AT1 |
|
PS7341C-1A |
NEC |
|
| Current limit type (5 pin NO Contact DC) |
| Linear IS |
LT1021ACH-10 |
|
REF102CM |
Burr-Brown |
|
| Linear IS |
LT1021BCH-10 |
|
REF102BM |
Burr-Brown |
|
| Linear IS |
LT1021BMH-10 |
|
REF102SM |
Burr-Brown |
|
| Linear IS |
LT1021CCH-10 |
|
REF102BM |
Burr-Brown |
|
| Linear IS |
LT1021CMH-10 |
|
REF102SM |
Burr-Brown |
|
| Linear IS |
LT1021DCH-10 |
|
REF102AM |
Burr-Brown |
|
| Linear IS |
LT1021DMH-10 |
|
REF102RM |
Burr-Brown |
|
| STMicroelectronics |
STPS8H100D |
|
MBR10100 |
ON Semiconductor |
|
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