Характеристики | Производитель: Microsemi-PPG • Вредные вещества: RoHS Без свинца • Серия: POWER MOS V® • Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V • Drain to Source Voltage (Vdss): 100V • Gate Charge (Qg) @ Vgs: 225nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 75A • Input Capacitance (Ciss) @ Vds: 5160pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 300W • Mounting Type: Through Hole • Package / Case: TO-247 |