APT100GF60JU3
A
P
T
1
00G
F
60J
U
3 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
1 - 9
ISOTOP
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
I
C1
T
C
= 25C
120
I
C2
Continuous Collector Current
T
C
= 80C
100
I
CM
Pulsed Collector Current
T
C
= 25C
320
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
416
W
IF
AV
Maximum Average Forward Current
Duty cycle=0.5 T
C
= 80C
30
IF
RMS
RMS Forward Current (Square wave, 50% duty)
39
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C
A
E
G
V
CES
= 600V
I
C
= 100A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
- Low
voltage
drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
ISOTOP
Buck chopper
NPT IGBT
A
C
G
E
APT100GF60JU3
A
P
T
1
00G
F
60J
U
3 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
2 - 9
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 100A
600
V
T
j
= 25C
100
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125C
1000
A
T
j
= 25C
2.0
2.5
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 100A
T
j
= 125C
2.2
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 1mA
3
5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
150
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
4300
C
oes
Output
Capacitance
470
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
400
pF
Q
g
Total gate Charge
330
Q
ge
Gate Emitter Charge
290
Q
gc
Gate Collector Charge
V
GS
= 15V
V
Bus
= 300V
I
C
= 100A
200
nC
T
d(on)
Turn-on Delay Time
26
T
r
Rise
Time
25
T
d(off)
Turn-off Delay Time
150
T
f
Fall
Time
30
ns
E
on
Turn-on Switching Energy
3.35
E
off
Turn off Switching Energy
Resistive Switching (25C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 100A
R
G
= 5
W
2.85
mJ
T
d(on)
Turn-on Delay Time
26
T
r
Rise
Time
25
T
d(off)
Turn-off Delay Time
170
T
f
Fall
Time
40
ns
E
on
Turn-on Switching Energy
4.3
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 100A
R
G
= 5
W
3.5
mJ
APT100GF60JU3
A
P
T
1
00G
F
60J
U
3 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
3 - 9
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F
= 30A
1.6
1.8
I
F
= 60A
1.9
V
F
Diode Forward Voltage
I
F
= 30A
T
j
= 125C
1.4
V
V
R
= 600V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
= 600V
T
j
= 125C
500
A
C
T
Junction
Capacitance
V
R
=
200V
44 pF
Reverse Recovery Time
I
F
=1A,V
R
=30V
di/dt =100A/s
T
j
= 25C
23
T
j
= 25C
85
t
rr
Reverse Recovery Time
T
j
= 125C
160
ns
T
j
= 25C
4
I
RRM
Maximum Reverse Recovery Current
T
j
= 125C
8
A
T
j
= 25C
130
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/s
T
j
= 125C
700
nC
t
rr
Reverse Recovery Time
70
ns
Q
rr
Reverse Recovery Charge
1300
nC
I
RRM
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 400V
di/dt =1000A/s
T
j
= 125C
30 A
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT 0.3
R
thJC
Junction
to
Case
Diode
1.21
R
thJA
Junction to Ambient (IGBT & Diode)
20
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
,T
STG
Storage
Temperature
Range
-55
150
T
L
Max Lead Temp for Soldering:0.063" from case for 10 sec
300
C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt Package
Weight
29.2 g
APT100GF60JU3
A
P
T
1
00G
F
60J
U
3 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
4 - 9
Typical IGBT Performance Curve
Output characteristics (V
GE
=15V)
Tc=-55C
Tc=25C
Tc=125C
0
50
100
150
200
250
300
350
0
1
2
3
4
I
c
, C
o
lle
ct
o
r
C
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
Tc=-55C
Tc=25C
Tc=125C
0
50
100
150
200
250
300
0
1
2
3
4
Ic,
Co
ll
ect
o
r
Cu
r
r
en
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
9
10
V
GE
, Gate to Emitter Voltage (V)
Ic,
C
o
lle
ct
o
r
Cu
r
r
en
t
(
A
)
250s Pulse Test
< 0.5% Duty cycle
Ic=200A
Ic=100A
Ic=50A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
V
GE
, Gate to Emitter Voltage (V)
V
CE
, C
o
lle
c
t
or
t
o
E
m
it
t
e
r
V
o
l
t
a
g
e
(
V
) On state Voltage vs Gate to Emitter Volt.
T
J
= 25C
250s Pulse Test
< 0.5% Duty cycle
Ic=200A
Ic=100A
Ic=50A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (C)
V
CE
, C
o
lle
c
t
or
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
) On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (C)
Co
lle
c
t
or t
o
E
m
it
t
e
r
Bre
a
k
dow
n
Vo
l
t
ag
e (N
o
r
ma
l
i
z
e
d
)
Breakdown Voltage vs Junction Temp.
0
20
40
60
80
100
120
140
160
-50 -25
0
25
50
75 100 125 150
T
C
, Case Temperature (C)
I
c
,
DC Col
l
e
c
t
o
r
Cu
rre
nt
(
A
)
DC Collector Current vs Case Temperature
Gate Charge
V
CE
=120V
V
CE
=300V
V
CE
=480V
0
2
4
6
8
10
12
14
16
18
0
50
100
150
200
250
300
350
Gate Charge (nC)
V
GE
,
G
a
te to
E
m
i
t
ter
V
o
l
t
a
g
e
(V
)
I
C
= 100A
T
J
= 25C
APT100GF60JU3
A
P
T
1
00G
F
60J
U
3 R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
5 - 9
V
GE
= 15V
15
20
25
30
35
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
d
(
on)
,
Tur
n-
O
n
De
l
a
y
Ti
m
e
(
n
s
)
Turn-On Delay Time vs Collector Current
Tj = 25C
V
CE
= 400V
R
G
= 5
V
GE
=15V,
T
J
=25C
V
GE
=15V,
T
J
=125C
50
100
150
200
250
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
d
(
o
f
f
)
,
Tur
n-
O
f
f
De
l
a
y
Ti
m
e
(
n
s
)
Turn-Off Delay Time vs Collector Current
V
CE
= 400V
R
G
= 5
V
GE
=15V,
T
J
=125C
0
20
40
60
80
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
r
,
R
i
se
T
i
m
e
(
n
s)
Current Rise Time vs Collector Current
V
CE
= 400V
R
G
= 5
T
J
= 25C
T
J
= 125C
0
20
40
60
80
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
f
,
Fa
l
l
Ti
m
e
(
n
s
)
Current Fall Time vs Collector Current
V
CE
= 400V, V
GE
= 15V, R
G
= 5
T
J
=25C,
V
GE
=15V
T
J
=125C,
V
GE
=15V
0
2
4
6
8
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
E
on
,
Tur
n-
O
n
E
n
e
r
gy
Los
s
(
m
J
)
Turn-On Energy Loss vs Collector Current
V
CE
= 400V
R
G
= 5
T
J
= 25C
T
J
= 125C
0
1
2
3
4
5
6
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
E
of
f
,
Tur
n-
of
f
E
n
e
r
gy
Los
s
(
m
J
)
Turn-Off Energy Loss vs Collector Current
V
CE
= 400V
V
GE
= 15V
R
G
= 5
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
Eon, 50A
Eoff, 50A
0
4
8
12
16
0
10
20
30
40
50
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
i
t
c
h
i
ng E
n
e
r
gy
Los
s
e
s
(
m
J
)
V
CE
= 400V
V
GE
= 15V
T
J
= 125C
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
Eon, 50A
Eoff, 50A
0
2
4
6
8
10
0
25
50
75
100
125
T
J
, Junction Temperature (C)
S
w
i
t
c
h
i
ng E
n
e
r
gy
Los
s
e
s
(
m
J
)
Switching Energy Losses vs Junction Temp.
V
CE
= 400V
V
GE
= 15V
R
G
= 5
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