Производитель: NXP Semiconductors  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 0.69nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 385mA  •  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 830mW  •  Mounting Type: Surface Mount  •  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3  •  Встречается под наим.: 568-4858-6